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SMMUN2214LT1G

Onsemi

SMMUN2214LT1G by Onsemi

SMMUN2214LT1G by Onsemi is a NPN BJT transistor with built-in resistor for switching applications. It has a max collector-emitter voltage of 50V, max collector current of 0.1A, and min DC current gain of 80 (hFE). This small outline package with gull wing terminals is ideal for surface mount designs in automotive electronics (AEC-Q101 compliant).

Median Price

$0.078

Lifecycle Status

Suppliers In-Stock

18

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 28,800 parts In-Stock

1+ parts

$0.123

100+ parts

$0.122

1k+ parts

$0.121

10k+ parts

$0.120

28,800

$0.123

$0.122

$0.121

$0.120

Mouser Electronics

USA . 96,247 parts In-Stock

1+ parts

$0.180

100+ parts

$0.067

1k+ parts

$0.043

10k+ parts

$0.033

96,247

$0.180

$0.067

$0.043

$0.033

Rochester

USA . 810,000 parts In-Stock

1+ parts

-

100+ parts

$0.030

1k+ parts

$0.025

10k+ parts

$0.023

810,000

-

$0.030

$0.025

$0.023

Chip1Stop

Japan . 3,375 parts In-Stock

1+ parts

-

100+ parts

$0.038

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$0.030

10k+ parts

-

3,375

-

$0.038

$0.030

-

Verical

USA . 1,625 parts In-Stock

1+ parts

-

100+ parts

$0.078

1k+ parts

$0.049

10k+ parts

$0.043

1,625

-

$0.078

$0.049

$0.043

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,416 parts In-Stock

1+ parts

$0.024

100+ parts

-

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1,416

$0.024

-

-

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Nova Conductors

Japan . 50 parts In-Stock

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$0.060

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-

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50

$0.060

-

-

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Bristol Electronics

USA . 8,599 parts In-Stock

1+ parts

$0.095

100+ parts

$0.048

1k+ parts

$0.019

10k+ parts

$0.012

8,599

$0.095

$0.048

$0.019

$0.012

TME

Poland . 45,900 parts In-Stock

1+ parts

$0.100

100+ parts

$0.037

1k+ parts

$0.027

10k+ parts

$0.025

45,900

$0.100

$0.037

$0.027

$0.025

Flip Electronics

USA . 480,000 parts In-Stock

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-

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480,000

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Vyrian

USA . 297,540 parts In-Stock

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NAC Semi

USA . 135,000 parts In-Stock

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$0.025

135,000

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$0.025

Chip Stock

USA . 55,000 parts In-Stock

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55,000

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Dan-Mar Components

USA . 8,599 parts In-Stock

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8,599

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ComSIT Distribution GmbH

Germany . 2,830 parts In-Stock

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2,830

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ComSIT USA

USA . 2,830 parts In-Stock

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2,830

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R&J Components

USA . 2,165 parts In-Stock

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2,165

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Cyclops Electronics Ltd

UK . 1,090 parts In-Stock

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1,090

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Distributors (Availability)

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Ampacity Inc.

Singapore . 339,768 parts In-Stock

1+ parts

$0.021

100+ parts

-

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339,768

$0.021

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Semicontronic

India . 339,196 parts In-Stock

1+ parts

$0.021

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$0.020

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$0.020

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339,196

$0.021

$0.020

$0.020

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Corphita

USA . 2,061 parts In-Stock

1+ parts

$0.022

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2,061

$0.022

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Corohmni

South Africa . 76 parts In-Stock

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$0.025

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76

$0.025

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Aranea Global

USA . 1,000 parts In-Stock

1+ parts

$0.059

100+ parts

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1k+ parts

$0.057

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1,000

$0.059

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$0.057

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Argo Parts USA

USA . 2,467 parts In-Stock

1+ parts

$0.060

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$0.058

2,467

$0.060

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$0.058

Aztec Data Supply Inc.

USA . 3,113 parts In-Stock

1+ parts

$1.120

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3,113

$1.120

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Advanced Electronics

New Zealand . 60 parts In-Stock

1+ parts

$1.199

100+ parts

$1.139

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$1.139

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60

$1.199

$1.139

$1.139

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Continental Prestige Electronics

USA . 951,000 parts In-Stock

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$0.040

951,000

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$0.040

Perfect Parts

USA . 950,327 parts In-Stock

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Infinite Electronics LLP (Excess)

. 225,361 parts In-Stock

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225,361

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RC Electronics

USA . 134,181 parts In-Stock

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$0.060

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$0.060

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134,181

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$0.060

$0.060

$0.050

Lixinc

USA . 16,226 parts In-Stock

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16,226

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TANS Electronics

Latvia . 5,789 parts In-Stock

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5,789

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Kepictronics

USA . 3,000 parts In-Stock

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Futuretech Components

Singapore . 2,297 parts In-Stock

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2,297

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UHIMA Technologies

Türkiye . 515 parts In-Stock

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515

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SupplyDigital Components

Austria . 456 parts In-Stock

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456

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Kulean Microsystems

USA . 199 parts In-Stock

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199

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Problanco Electronics

Mexico . 20 parts In-Stock

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20

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Overview

Upgrade your electronic projects with the SMMUN2214LT1G by Onsemi, a high-quality Small Signal Bipolar Junction Transistor that offers unmatched performance and reliability. Manufactured by Onsemi, a trusted name in the industry, this NPN transistor with a built-in resistor is perfect for switching applications. With a maximum power dissipation of 0.4W and a maximum collector-emitter voltage of 50V, this transistor provides exceptional value and benefits to customers looking for a reliable solution for their electronic needs. Don't settle for less when you can have the best with the SMMUN2214LT1G by Onsemi.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good insulation and protection for the transistor, ensuring durability and reliability in various operating conditions.

Polarity or Channel Type: NPN

NPN transistors are commonly used for amplification and switching applications, making this product versatile and suitable for a wide range of uses.

Configuration: SINGLE WITH BUILT-IN RESISTOR

The built-in resistor simplifies circuit design and saves space, making this transistor convenient for applications where space is limited.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers efficient and reliable performance in control and power management circuits.

Surface Mount: YES

Surface mount technology allows for easy and efficient PCB assembly, making this transistor ideal for high-volume production.

Package Shape: RECTANGULAR

The rectangular shape facilitates easy mounting and placement on the PCB, ensuring a secure and stable connection.

Terminal Form: GULL WING

The gull wing terminals provide enhanced mechanical strength and solderability, ensuring a secure and reliable connection to the PCB.

No. of Terminals: 3

With three terminals, this transistor is easy to integrate into circuits and offers flexibility in connection options.

Maximum Power Dissipation (Abs): 0.4 W

With a maximum power dissipation of 0.4W, this transistor can handle moderate power levels without overheating, ensuring long-term reliability.

Package Style (Meter): SMALL OUTLINE

The small outline package design saves space on the PCB and allows for high-density mounting, making it suitable for compact electronic devices.

Minimum DC Current Gain (hFE): 80

A high minimum DC current gain of 80 ensures consistent and predictable amplification characteristics, making this transistor ideal for precision applications.

Maximum Collector-Emitter Voltage: 50 V

With a maximum collector-emitter voltage of 50V, this transistor can handle moderate voltage levels, making it suitable for a variety of applications.

Transistor Element Material: SILICON

Silicon transistors offer high performance and reliability, making this product a dependable choice for electronic circuits.

Maximum Collector Current (IC): 0.1 A

With a maximum collector current of 0.1A, this transistor can handle moderate current levels, making it suitable for a wide range of circuit designs.

Terminal Finish: Matte Tin (Sn) - annealed

The matte tin finish provides good solderability and corrosion resistance, ensuring a reliable connection in various operating environments.

Terminal Position: DUAL

The dual terminal position allows for flexible and convenient connection options, making this transistor easy to integrate into different circuit layouts.

Reference Standard: AEC-Q101

Compliance with the AEC-Q101 standard ensures high reliability and performance in automotive applications, making this transistor a suitable choice for automotive electronics.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) SMMUN2214LT1G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

BUILT IN BIAS RESISTANCE RATIO IS 4.7

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

80

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Reference Standard:

AEC-Q101

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

SMMUN2214LT1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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