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SMMUN2116LT1G

Onsemi

SMMUN2116LT1G by Onsemi

SMMUN2116LT1G by Onsemi is a PNP BJT transistor with a built-in resistor for switching applications. It has a min DC current gain of 160 (hFE), max collector-emitter voltage of 50V, and max collector current of 0.1A. This small outline package with gull wing terminals is surface mountable and complies with AEC-Q101 standards.

Median Price

$0.100

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 2,445 parts In-Stock

1+ parts

$0.180

100+ parts

-

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$0.030

2,445

$0.180

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$0.030

Rochester

USA . 154,870 parts In-Stock

1+ parts

-

100+ parts

$0.020

1k+ parts

$0.017

10k+ parts

$0.015

154,870

-

$0.020

$0.017

$0.015

DigiKey

USA . 154,870 parts In-Stock

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154,870

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Verical

USA . 96,000 parts In-Stock

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Flip Electronics (Authorized)

USA . 90,000 parts In-Stock

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90,000

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Digiode

USA . 95 parts In-Stock

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$0.024

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95

$0.024

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Vyrian

USA . 682 parts In-Stock

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$0.025

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682

$0.025

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DigiKey Marketplace

USA . 154,870 parts In-Stock

1+ parts

-

100+ parts

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154,870

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Flip Electronics

USA . 90,000 parts In-Stock

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90,000

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Distributors (Availability)

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Corphita

USA . 2,302 parts In-Stock

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$0.022

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2,302

$0.022

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Corohmni

South Africa . 417 parts In-Stock

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$0.025

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417

$0.025

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Advanced Electronics

New Zealand . 2,000 parts In-Stock

1+ parts

$1.584

100+ parts

$1.441

1k+ parts

$1.299

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-

2,000

$1.584

$1.441

$1.299

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Continental Prestige Electronics

USA . 154,870 parts In-Stock

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$0.040

154,870

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$0.040

Kepictronics

USA . 54,000 parts In-Stock

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54,000

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Problanco Electronics

Mexico . 6,920 parts In-Stock

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Kulean Microsystems

USA . 6,634 parts In-Stock

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6,634

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SupplyDigital Components

Austria . 6,399 parts In-Stock

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6,399

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TANS Electronics

Latvia . 2,835 parts In-Stock

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2,835

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UHIMA Technologies

Türkiye . 167 parts In-Stock

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167

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Overview

Elevate your electronic designs with the SMMUN2116LT1G by Onsemi, a high-quality Small Signal Bipolar Junction Transistor that offers unparalleled performance and reliability. With Onsemi's reputation for excellence in manufacturing, this PNP transistor with built-in resistor is perfect for switching applications. Delivering a maximum power dissipation of 0.4 W and a minimum DC current gain of 160, this innovative component guarantees superior functionality. Whether you're a hobbyist or a professional, the SMMUN2116LT1G promises to enhance your projects with its outstanding features and benefits.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is durable and provides good protection for the internal components of the transistor, ensuring a longer lifespan.

Polarity or Channel Type: PNP

The PNP configuration allows for easy interfacing with other PNP transistors in circuits, making it versatile for various applications.

Configuration: SINGLE WITH BUILT-IN RESISTOR

The built-in resistor simplifies circuit design and saves space on the PCB, making this transistor ideal for compact and efficient electronic devices.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor provides fast response times and is highly efficient in switching circuits.

Surface Mount: YES

With surface mount capability, this transistor can be easily integrated into modern PCB designs, saving assembly time and reducing overall size of the product.

Maximum Power Dissipation (Abs): 0.4 W

With a maximum power dissipation of 0.4 W, this transistor can handle moderate power levels, suitable for many small signal applications.

Minimum DC Current Gain (hFE): 160

The high minimum DC current gain ensures consistent and stable amplification of signals in the circuit, leading to reliable performance.

Maximum Collector-Emitter Voltage: 50 V

The high maximum collector-emitter voltage rating of 50 V allows for use in a wide range of voltage applications, providing flexibility in circuit design.

Maximum Collector Current (IC): 0.1 A

With a maximum collector current of 0.1 A, this transistor can handle moderate current levels, making it suitable for various low-power applications.

Reference Standard: AEC-Q101

Compliance with the AEC-Q101 standard ensures that this transistor meets automotive-grade quality requirements, making it suitable for use in automotive electronics.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) SMMUN2116LT1G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

160

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Reference Standard:

AEC-Q101

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

SMMUN2116LT1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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