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SMMUN2116LT3G

Onsemi

SMMUN2116LT3G by Onsemi

SMMUN2116LT3G by Onsemi is a PNP BJT with 160 min hFE, 50V VCE, and 0.1A IC. Ideal for switching applications, it comes in a small outline package with Gull Wing terminals. AEC-Q101 compliant, this transistor features built-in resistor and matte tin finish for automotive electronics.

Median Price

$0.038

Lifecycle Status

Suppliers In-Stock

12

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 100,000 parts In-Stock

1+ parts

-

100+ parts

$0.041

1k+ parts

$0.034

10k+ parts

$0.030

100,000

-

$0.041

$0.034

$0.030

DigiKey

USA . 100,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

$0.030

100,000

-

-

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$0.030

Flip Electronics (Authorized)

USA . 100,000 parts In-Stock

1+ parts

-

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100,000

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Verical

USA . 100,000 parts In-Stock

1+ parts

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$0.037

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-

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$0.037

Mouser Electronics

USA . 9,999 parts In-Stock

1+ parts

-

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$0.040

9,999

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-

-

$0.040

Distributors (In-Stock)

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Digiode

USA . 719 parts In-Stock

1+ parts

$0.031

100+ parts

-

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719

$0.031

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Nova Conductors

Japan . 95 parts In-Stock

1+ parts

$0.048

100+ parts

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95

$0.048

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Flip Electronics

USA . 100,000 parts In-Stock

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100,000

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Vyrian

USA . 81,718 parts In-Stock

1+ parts

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81,718

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ACDS - Activité Composants Distribution Service

France . 9,549 parts In-Stock

1+ parts

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9,549

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Bristol Electronics

USA . 9,549 parts In-Stock

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9,549

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Dan-Mar Components

USA . 9,549 parts In-Stock

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9,549

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Distributors (Availability)

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Corphita

USA . 2,134 parts In-Stock

1+ parts

$0.030

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2,134

$0.030

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Corohmni

South Africa . 259 parts In-Stock

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$0.030

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259

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Argo Parts USA

USA . 1,097 parts In-Stock

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$0.048

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$0.047

1,097

$0.048

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$0.047

Netroflash

USA . 1,000 parts In-Stock

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$0.048

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1,000

$0.048

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Ampacity Inc.

Singapore . 81,799 parts In-Stock

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$0.056

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81,799

$0.056

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Microchip USA

USA . 1,879 parts In-Stock

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$0.195

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1,879

$0.195

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Continental Prestige Electronics

USA . 100,000 parts In-Stock

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$0.040

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$0.040

SupplyDigital Components

Austria . 8,222 parts In-Stock

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8,222

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Problanco Electronics

Mexico . 7,277 parts In-Stock

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TANS Electronics

Latvia . 2,659 parts In-Stock

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2,659

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Kulean Microsystems

USA . 1,265 parts In-Stock

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1,265

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UHIMA Technologies

Türkiye . 695 parts In-Stock

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695

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Overview

Upgrade your electronic designs with the SMMUN2116LT3G by Onsemi, a high-quality Small Signal Bipolar Junction Transistor (BJT) perfect for switching applications. Manufactured by Onsemi, known for their superior products, this PNP transistor features a built-in resistor in a compact rectangular package. With a minimum DC current gain of 160 and a maximum collector-emitter voltage of 50V, this transistor offers reliable performance and efficiency. Trust Onsemi to deliver cutting-edge technology for your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and heat-resistant material, making the transistor suitable for a variety of applications.

Polarity or Channel Type: PNP

PNP transistors are commonly used in high-side switching configurations, making this transistor versatile for different circuit designs.

Configuration: SINGLE WITH BUILT-IN RESISTOR

Built-in resistor simplifies circuit design and saves space on the PCB, making it convenient for compact electronic devices.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient performance in controlling current flow.

Surface Mount: YES

Easily mountable on the surface of the PCB, facilitating automated assembly processes and saving time during production.

No. of Terminals: 3

Simple three-terminal configuration for easy integration into circuit designs.

Maximum Power Dissipation (Abs): 0.4 W

Can handle moderate power dissipation, suitable for low to medium power applications.

Minimum DC Current Gain (hFE): 160

High DC current gain ensures amplification of small input signals with high accuracy.

Maximum Collector-Emitter Voltage: 50 V

Able to withstand up to 50 volts, making it suitable for various voltage applications.

Maximum Collector Current (IC): 0.1 A

Capable of handling currents up to 0.1 ampere, suitable for low current applications.

Terminal Finish: Matte Tin (Sn) - annealed

Matte tin finish provides good conductivity and corrosion resistance for reliable performance over time.

Reference Standard: AEC-Q101

Complies with automotive industry quality standards, ensuring reliability in harsh operating conditions.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) SMMUN2116LT3G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

160

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Reference Standard:

AEC-Q101

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

SMMUN2116LT3G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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