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SMMUN2216LT1G

Onsemi

SMMUN2216LT1G by Onsemi

SMMUN2216LT1G by Onsemi is a NPN BJT transistor with built-in resistor for switching applications. It has a max VCEsat of 0.25V, min hFE of 160, and can handle a max collector-emitter voltage of 50V. This small outline package with gull wing terminals operates b/w -55 to 150°C, making it suitable for various electronic designs.

Median Price

$0.058

Lifecycle Status

Suppliers In-Stock

22

In-Stock Inventory

1k+

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Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 26,099 parts In-Stock

1+ parts

$0.180

100+ parts

$0.068

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$0.043

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$0.041

26,099

$0.180

$0.068

$0.043

$0.041

DigiKey

USA . 13,274 parts In-Stock

1+ parts

$0.180

100+ parts

$0.067

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$0.043

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-

13,274

$0.180

$0.067

$0.043

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Chip1Stop

Japan . 3,000 parts In-Stock

1+ parts

$0.557

100+ parts

$0.124

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$0.070

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3,000

$0.557

$0.124

$0.070

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Future Electronics

Canada . 192,000 parts In-Stock

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$0.037

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$0.037

Rochester

USA . 156,923 parts In-Stock

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-

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$0.022

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$0.018

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$0.017

156,923

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$0.017

Verical

USA . 156,923 parts In-Stock

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156,923

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EBV Elektronik

Germany . 27,000 parts In-Stock

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Element14

Singapore . 2,912 parts In-Stock

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$0.041

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$0.032

2,912

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$0.041

$0.032

Farnell

UK . 2,903 parts In-Stock

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$0.058

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$0.033

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$0.019

2,903

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$0.058

$0.033

$0.019

Flip Electronics (Authorized)

USA . 2,850 parts In-Stock

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2,850

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Digiode

USA . 1,929 parts In-Stock

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$0.024

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$0.024

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Nova Conductors

Japan . 10 parts In-Stock

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$0.065

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10

$0.065

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Bristol Electronics

USA . 11,730 parts In-Stock

1+ parts

$0.095

100+ parts

$0.048

1k+ parts

$0.019

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$0.012

11,730

$0.095

$0.048

$0.019

$0.012

R&J Components

USA . 110,418 parts In-Stock

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Chip Stock

USA . 76,000 parts In-Stock

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Cyclops Electronics Ltd

UK . 59,898 parts In-Stock

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Vyrian

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NAC Semi

USA . 27,000 parts In-Stock

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$0.051

27,000

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$0.051

Dan-Mar Components

USA . 11,730 parts In-Stock

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11,730

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ACDS - Activité Composants Distribution Service

France . 3,000 parts In-Stock

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Flip Electronics

USA . 2,850 parts In-Stock

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ComSIT Distribution GmbH

Germany . 312 parts In-Stock

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312

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Distributors (Availability)

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Ampacity Inc.

Singapore . 50,803 parts In-Stock

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$0.010

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$0.010

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Semicontronic

India . 50,947 parts In-Stock

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$0.013

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Corphita

USA . 300 parts In-Stock

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300

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Corohmni

South Africa . 65 parts In-Stock

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$0.025

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65

$0.025

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Aranea Global

USA . 2,000 parts In-Stock

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$0.063

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$0.061

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$0.063

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Argo Parts USA

USA . 617 parts In-Stock

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$0.065

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$0.063

617

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$0.063

Aztec Data Supply Inc.

USA . 1,078 parts In-Stock

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$0.555

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Perfect Parts

USA . 194,874 parts In-Stock

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Continental Prestige Electronics

USA . 156,923 parts In-Stock

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$0.040

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ChipstoGo Electronic ltd

UK . 120,000 parts In-Stock

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Cyclops Electronics Ltd (Excess)

UK . 36,000 parts In-Stock

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Glotronic Ltd.

UK . 28,800 parts In-Stock

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Authorized Procurement Solutions

USA . 24,000 parts In-Stock

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GreenTree Electronics

Israel . 18,000 parts In-Stock

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Lixinc

USA . 15,978 parts In-Stock

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Futuretech Components

Singapore . 10,000 parts In-Stock

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Problanco Electronics

Mexico . 7,592 parts In-Stock

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Kulean Microsystems

USA . 3,456 parts In-Stock

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SupplyDigital Components

Austria . 3,356 parts In-Stock

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TANS Electronics

Latvia . 1,913 parts In-Stock

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Kepictronics

USA . 400 parts In-Stock

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UHIMA Technologies

Türkiye . 220 parts In-Stock

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Overview

Discover the exceptional performance of the SMMUN2216LT1G by Onsemi, a top-quality Small Signal Bipolar Junction Transistor. Manufactured by Onsemi, this NPN transistor with built-in resistor is perfect for switching applications. With a low VCEsat of only 0.25V and a minimum DC current gain of 160, this transistor offers high efficiency and reliability. Its small outline package and Gull Wing terminals make it easy to integrate into your designs. Trust Onsemi for superior products that deliver unmatched value and benefits to your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the transistor lightweight and durable, suitable for various applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used for amplification and switching applications, offering good performance and versatility.

Configuration: SINGLE WITH BUILT-IN RESISTOR

The built-in resistor simplifies circuit design and helps in reducing component count and board space usage.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring reliable performance in controlling electrical signals.

Maximum VCEsat: 0.25 V

Low VCEsat value results in minimal power loss and efficient operation, ideal for power-sensitive applications.

Surface Mount: YES

Surface mount capability allows for easy and efficient PCB assembly, saving time and labor costs.

Maximum Power Dissipation (Abs): 0.4 W

With a high power dissipation rating, the transistor can handle moderate power levels without overheating.

Minimum DC Current Gain (hFE): 160

High DC current gain ensures reliable amplification and signal processing within the circuit.

Maximum Operating Temperature: 150 °C

Wide operating temperature range enables the transistor to operate in various environmental conditions without performance degradation.

Maximum Collector-Emitter Voltage: 50 V

The high collector-emitter voltage rating allows for safe operation in circuits with higher voltage requirements.

Transistor Element Material: SILICON

Silicon material offers superior electrical properties and reliability, providing consistent performance over time.

Minimum Operating Temperature: -55 °C

The low operating temperature ensures the transistor can function in cold environments without issues.

Maximum Collector Current (IC): 0.1 A

Suitable for applications requiring low to moderate collector current levels, offering versatility in circuit design.

Terminal Finish: Matte Tin (Sn) - annealed

Matte tin finish provides good solderability and electrical conductivity, ensuring reliable connections.

Terminal Position: DUAL

Dual terminal positioning allows for flexible mounting options and easier integration into circuit designs.

Reference Standard: AEC-Q101

Compliance with AEC-Q101 standard ensures the transistor meets automotive-grade quality and reliability requirements.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) SMMUN2216LT1G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

BUILT IN BIAS RESISTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

160

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Reference Standard:

AEC-Q101

Sub-Category:

BIP General Purpose Small Signals

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Maximum VCEsat:

.25 V

Trade Compliance

SMMUN2216LT1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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