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SMMUN2111LT1

Onsemi

SMMUN2111LT1 by Onsemi

SMMUN2111LT1 by Onsemi is a PNP BJT transistor with built-in resistor for switching applications. It has a hFE of 35, Vce of 50V, and Ic of 0.1A. This surface mount device comes in a rectangular package with Gull Wing terminals, suitable for small outline designs.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 2,256 parts In-Stock

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Digiode

USA . 2,066 parts In-Stock

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2,066

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Authorized Procurement Solutions

USA . 22,000 parts In-Stock

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Problanco Electronics

Mexico . 1,487 parts In-Stock

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TANS Electronics

Latvia . 1,162 parts In-Stock

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Kulean Microsystems

USA . 922 parts In-Stock

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Corphita

USA . 729 parts In-Stock

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SupplyDigital Components

Austria . 563 parts In-Stock

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UHIMA Technologies

Türkiye . 259 parts In-Stock

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Corohmni

South Africa . 70 parts In-Stock

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Overview

Enhance the performance of your electronic devices with the SMMUN2111LT1 by Onsemi. With its high-quality manufacturing and reliable small signal bipolar junction transistor technology, this PNP transistor is perfect for switching applications. Its single configuration with a built-in resistor simplifies installation, making it a convenient choice for various projects. The SMMUN2111LT1 offers customers exceptional value, providing a maximum collector-emitter voltage of 50V and a maximum collector current of 0.1A. Upgrade your electronics with this surface mount transistor and experience superior functionality and efficiency.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy package material makes the transistor lightweight and durable.

Polarity or Channel Type: PNP

PNP polarity allows for easy integration into circuits that require PNP transistors.

Configuration: SINGLE WITH BUILT-IN RESISTOR

Built-in resistor simplifies circuit design and saves space on the circuit board.

Transistor Application: SWITCHING

Designed for switching applications, making it suitable for a wide range of electronic devices.

Surface Mount: YES

Surface mount capability allows for easy and efficient assembly onto circuit boards.

Package Shape: RECTANGULAR

Rectangular shape fits well on circuit boards and allows for efficient use of space.

Terminal Form: GULL WING

Gull wing terminal form provides secure and reliable connections.

No. of Terminals: 3

Three terminals provide the necessary connections for proper transistor functionality.

Package Style (Meter): SMALL OUTLINE

Small outline package style is space-saving and suitable for compact electronic devices.

Minimum DC Current Gain (hFE): 35

Minimum DC current gain of 35 ensures consistent and reliable transistor performance.

Maximum Collector-Emitter Voltage: 50 V

Suitable for applications requiring a collector-emitter voltage up to 50V.

Transistor Element Material: SILICON

Silicon material ensures high performance and reliability of the transistor.

Maximum Collector Current (IC): 0.1 A

Maximum collector current of 0.1A allows for handling moderate power loads.

Terminal Finish: Tin/Lead (Sn/Pb)

Tin/lead terminal finish provides good conductivity and solderability.

Terminal Position: DUAL

Dual terminal position offers flexibility in circuit board layout and wiring.

Maximum Time At Peak Reflow Temperature (s): 30

Allows for safe and reliable reflow soldering process.

Peak Reflow Temperature °C: 235

Peak reflow temperature of 235 °C ensures proper soldering and component attachment.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) SMMUN2111LT1 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

BUILT-IN BIAS RESISTOR RATIO 1

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

35

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

PNP

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

SMMUN2111LT1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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