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MC10H641FNR2G

Onsemi

MC10H641FNR2G by Onsemi

MC10H641FNR2G clock driver by Onsemi has 6.4 ns propagation delay, 5V nominal voltage, and 9 true outputs. It is used for differential latched input conditioning in applications requiring a max operating temperature of 85 °C.

Median Price

$6.312

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 3,012 parts In-Stock

1+ parts

-

100+ parts

$5.610

1k+ parts

$5.020

10k+ parts

$4.720

3,012

-

$5.610

$5.020

$4.720

Verical

USA . 500 parts In-Stock

1+ parts

-

100+ parts

$7.013

1k+ parts

$6.638

10k+ parts

-

500

-

$7.013

$6.638

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Distributors (In-Stock)

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Digiode

USA . 199 parts In-Stock

1+ parts

$5.938

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199

$5.938

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Vyrian

USA . 5,806 parts In-Stock

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ComSIT Distribution GmbH

Germany . 431 parts In-Stock

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431

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Distributors (Availability)

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Corphita

USA . 339 parts In-Stock

1+ parts

$5.625

100+ parts

-

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339

$5.625

-

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Corohmni

South Africa . 357 parts In-Stock

1+ parts

$6.250

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357

$6.250

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AZTECH Wire

Italy . 1,001 parts In-Stock

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$21.090

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1,001

$21.090

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QUARKTWIN TECHNOLOGY LTD

USA . 7,324 parts In-Stock

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7,324

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Problanco Electronics

Mexico . 4,466 parts In-Stock

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4,466

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SupplyDigital Components

Austria . 4,280 parts In-Stock

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Kulean Microsystems

USA . 3,472 parts In-Stock

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TANS Electronics

Latvia . 3,145 parts In-Stock

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3,145

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Continental Prestige Electronics

USA . 3,012 parts In-Stock

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$5.530

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$5.530

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UHIMA Technologies

Türkiye . 957 parts In-Stock

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957

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Microchip USA

USA . 304 parts In-Stock

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Overview

Enhance the performance of your electronic devices with the MC10H641FNR2G clock driver and buffer by Onsemi. Designed with precision and reliability in mind, this product ensures optimal signal distribution and synchronization for your applications. With a wide range of uses in various industries, this clock driver offers unparalleled value and benefits to customers seeking high-quality components for their projects. Trust Onsemi's expertise and innovation to take your designs to the next level with the MC10H641FNR2G.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material ensures durability and protection for the internal components of the clock driver, making it a reliable choice for long-term use.

Propagation Delay At Nominal Supply: 6.4 ns

Low propagation delay ensures fast and efficient operation of the clock driver, improving overall system performance.

Surface Mount: YES

Surface mount capability allows for easy installation on PCBs, saving space and reducing assembly time.

Input Conditioning: DIFFERENTIAL LATCHED

Differential latched input conditioning helps in minimizing noise and ensuring signal integrity, making the clock driver suitable for high-speed applications.

Nominal Supply Voltage / Vsup (V): 5

Operating at a nominal supply voltage of 5V ensures compatibility with standard power sources, making integration into existing systems hassle-free.

Maximum I (ol): 24 Amp

High output current capability of 24 Amp allows the clock driver to drive multiple loads without overheating or performance degradation.

Minimum Supply Voltage (Vsup): 4.75 V

Wide operating voltage range from 4.75V to 5.25V ensures flexibility in power supply options, accommodating different system requirements.

Technology: ECL

ECL (Emitter-Coupled Logic) technology offers high-speed and low-power operation, making the clock driver suitable for demanding applications where performance is critical.

Technical Specifications

Clock Drivers & Buffers MC10H641FNR2G attributes and parameters. Explore more Clock Drivers & Buffers devices from Onsemi

Specs

Family:

10H

Input Conditioning:

DIFFERENTIAL LATCHED

JESD-30 Code:

S-PQCC-J28

JESD-609 Code:

e3

Length:

11.505 mm

Logic IC Type:

Maximum I (ol):

24 Amp

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Inverted Outputs:

0

No. of Terminals:

28

No. of True Outputs:

9

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

0 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

LDCC28,.5SQ

Package Shape:

Package Style (Meter):

CHIP CARRIER

Peak Reflow Temperature (C):

260

Power Supplies (V):

5

Propagation Delay At Nominal Supply:

6.4 ns

Propagation Delay (tpd):

6.9 ns

Qualification:

Not Qualified

Maximum Same Edge Skew (tskwd):

.35 ns

Maximum Seated Height:

4.57 mm

Sub-Category:

Clock Drivers

Maximum Supply Voltage (Vsup):

5.25 V

Minimum Supply Voltage (Vsup):

4.75 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

ECL

Temperature Grade:

Terminal Finish:

TIN

Terminal Form:

Terminal Pitch:

1.27 mm

Terminal Position:

QUAD

Width:

11.505 mm

Minimum fmax:

65 MHz

Trade Compliance

MC10H641FNR2G Logic ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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