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MC10EL34DR2G

Onsemi

MC10EL34DR2G by Onsemi

MC10EL34DR2G clock driver by Onsemi has a propagation delay of 1.21 ns at 5V, with 3 true outputs and min fmax of 1100 MHz. It is used in industrial applications for differential input conditioning and open-emitter output characteristics.

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3

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1k+

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Vyrian

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Digiode

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AZTECH Wire

Italy . 180 parts In-Stock

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Component Stockers USA

USA . 793 parts In-Stock

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Kulean Microsystems

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Problanco Electronics

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Corphita

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TANS Electronics

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SupplyDigital Components

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UHIMA Technologies

Türkiye . 862 parts In-Stock

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Overview

Upgrade your clock drivers with the MC10EL34DR2G by Onsemi, a top-quality product from a trusted manufacturer. Ideal for various applications in the clock drivers & buffers category, this small outline package offers differential input conditioning, open-emitter output characteristics, and a fast propagation delay of 1.2 ns. With a wide temperature range and reliable performance, this industrial-grade technology ensures precise timing in your designs. Trust Onsemi for superior quality and value in every product they offer.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, making this product suitable for various industrial applications.

Propagation Delay At Nominal Supply: 1.21 ns

Ensures fast signal processing, resulting in precise timing and synchronization within the system.

Surface Mount: YES

Facilitates easy installation and integration onto circuit boards, saving time and effort during manufacturing.

Input Conditioning: DIFFERENTIAL

Allows for robust noise immunity and accurate signal detection, enhancing the reliability of the product in noisy environments.

Nominal Supply Voltage / Vsup (V): 5

Operates at a standard voltage level, compatible with a wide range of systems and power sources.

Maximum Operating Temperature: 85 °C

Can withstand high temperatures, ensuring reliable performance in demanding environmental conditions.

Technology: ECL

Utilizes Emitter-Coupled Logic technology for high-speed operation and low power consumption, making it ideal for applications requiring fast signal processing.

Technical Specifications

Clock Drivers & Buffers MC10EL34DR2G attributes and parameters. Explore more Clock Drivers & Buffers devices from Onsemi

Specs

Additional Features:

NECL MODE: VCC = 0V WITH VEE = -4.2V TO -5.7V

Family:

10EL

Input Conditioning:

DIFFERENTIAL

JESD-30 Code:

R-PDSO-G16

JESD-609 Code:

e3

Length:

9.9 mm

Logic IC Type:

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Inverted Outputs:

0

No. of Terminals:

16

No. of True Outputs:

3

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Output Characteristics:

OPEN-EMITTER

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP16,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Power Supplies (V):

+-5

Propagation Delay At Nominal Supply:

1.21 ns

Propagation Delay (tpd):

1.2 ns

Qualification:

Not Qualified

Maximum Same Edge Skew (tskwd):

.05 ns

Maximum Seated Height:

1.75 mm

Sub-Category:

Clock Drivers

Maximum Supply Voltage (Vsup):

5.7 V

Minimum Supply Voltage (Vsup):

4.2 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

ECL

Temperature Grade:

Terminal Finish:

TIN

Terminal Form:

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

3.9 mm

Minimum fmax:

1100 MHz

Trade Compliance

MC10EL34DR2G Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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