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MC100H642FNG

Onsemi

MC100H642FNG by Onsemi

MC100H642FNG clock driver by Onsemi features 6.5ns propagation delay, 5V nominal voltage, and 8 true outputs. Ideal for applications requiring differential mux input conditioning in a square chip carrier package with ECL technology, operating b/w 0-85 °C temperature range.

Median Price

$12.454

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 2,580 parts In-Stock

1+ parts

-

100+ parts

$11.070

1k+ parts

$9.900

10k+ parts

$9.320

2,580

-

$11.070

$9.900

$9.320

Verical

USA . 1,554 parts In-Stock

1+ parts

-

100+ parts

$13.838

1k+ parts

$12.375

10k+ parts

-

1,554

-

$13.838

$12.375

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Distributors (In-Stock)

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Digiode

USA . 838 parts In-Stock

1+ parts

$11.714

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838

$11.714

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Vyrian

USA . 1,951 parts In-Stock

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1,951

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Distributors (Availability)

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Corphita

USA . 1,309 parts In-Stock

1+ parts

$11.097

100+ parts

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1,309

$11.097

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Corohmni

South Africa . 232 parts In-Stock

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$11.150

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232

$11.150

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AZTECH Wire

Italy . 538 parts In-Stock

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$21.410

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538

$21.410

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SupplyDigital Components

Austria . 7,097 parts In-Stock

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Problanco Electronics

Mexico . 6,066 parts In-Stock

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Kulean Microsystems

USA . 5,693 parts In-Stock

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Microchip USA

USA . 4,910 parts In-Stock

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Continental Prestige Electronics

USA . 2,580 parts In-Stock

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Kepictronics

USA . 2,580 parts In-Stock

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2,580

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UHIMA Technologies

Türkiye . 968 parts In-Stock

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968

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TANS Electronics

Latvia . 423 parts In-Stock

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Overview

Discover the MC100H642FNG clock driver & buffer by Onsemi, crafted with precision and reliability in mind. This versatile chip carrier is designed to enhance differential mux input conditioning, providing a seamless experience for your applications. With a nominal supply voltage of 5V and a maximum operating temperature of 85 °C, this product ensures optimal performance in any environment. Trust Onsemi's commitment to quality and innovation, and unlock the potential of your projects with the MC100H642FNG.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material is durable and provides excellent protection to the internal components of the clock driver, ensuring long-term reliability.

Propagation Delay At Nominal Supply: 6.5 ns

Low propagation delay ensures that the clock signals are transmitted quickly and accurately, making this clock driver suitable for high-speed applications.

Surface Mount: YES

Surface mount capability makes installation easy and saves space on the PCB, making it ideal for compact electronic devices.

Input Conditioning: DIFFERENTIAL MUX

Differential multiplexer input conditioning helps in reducing noise and interference, ensuring reliable and stable clock signal outputs.

Nominal Supply Voltage / Vsup (V): 5

Operating at a standard 5V supply voltage makes this clock driver compatible with a wide range of electronic devices and systems.

Maximum I (ol): 24 Amp

High output current capability allows the clock driver to drive multiple loads or components without compromising signal integrity.

Minimum Operating Temperature: 0 °C

Wide operating temperature range allows the clock driver to function reliably in various environmental conditions.

Minimum Supply Voltage (Vsup): 4.75 V

Support for lower supply voltage ensures compatibility with systems that require a slightly lower voltage for operation.

Moisture Sensitivity Level (MSL): 3

MSL level 3 indicates that the clock driver is moderately sensitive to moisture, making it suitable for use in standard assembly processes.

Technical Specifications

Clock Drivers & Buffers MC100H642FNG attributes and parameters. Explore more Clock Drivers & Buffers devices from Onsemi

Specs

Family:

100H

Input Conditioning:

DIFFERENTIAL MUX

JESD-30 Code:

S-PQCC-J28

JESD-609 Code:

e3

Length:

11.505 mm

Logic IC Type:

Maximum I (ol):

24 Amp

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Inverted Outputs:

0

No. of Terminals:

28

No. of True Outputs:

8

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

0 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

LDCC28,.5SQ

Package Shape:

Package Style (Meter):

CHIP CARRIER

Peak Reflow Temperature (C):

260

Power Supplies (V):

5

Propagation Delay At Nominal Supply:

6.5 ns

Propagation Delay (tpd):

5.75 ns

Qualification:

Not Qualified

Maximum Same Edge Skew (tskwd):

.5 ns

Maximum Seated Height:

4.57 mm

Sub-Category:

Clock Drivers

Maximum Supply Voltage (Vsup):

5.25 V

Minimum Supply Voltage (Vsup):

4.75 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

ECL

Temperature Grade:

Terminal Finish:

TIN

Terminal Form:

Terminal Pitch:

1.27 mm

Terminal Position:

QUAD

Width:

11.505 mm

Minimum fmax:

100 MHz

Trade Compliance

MC100H642FNG Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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