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KAI-47051-AXA-JP-B2

Onsemi

KAI-47051-AXA-JP-B2 by Onsemi

KAI-47051-AXA-JP-B2 by Onsemi is an image sensor with 5.5x5.5 um pixel size, 40 MHz master clock, and 66 dB dynamic range. It is suitable for applications requiring high-resolution imaging in a compact form factor, such as industrial machine vision systems or medical imaging devices.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 6,464 parts In-Stock

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Digiode

USA . 1,647 parts In-Stock

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AZTECH Wire

Italy . 400 parts In-Stock

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$12.810

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400

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TANS Electronics

Latvia . 8,001 parts In-Stock

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Problanco Electronics

Mexico . 7,474 parts In-Stock

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SupplyDigital Components

Austria . 3,361 parts In-Stock

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Kulean Microsystems

USA . 2,946 parts In-Stock

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Corphita

USA . 1,839 parts In-Stock

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UHIMA Technologies

Türkiye . 638 parts In-Stock

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Corohmni

South Africa . 83 parts In-Stock

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Overview

Discover the world of high-quality image sensors with the KAI-47051-AXA-JP-B2 by Onsemi. With a reputation for excellence, Onsemi delivers superior performance and reliability in their products. This image sensor offers endless possibilities in various applications, providing exceptional value to customers seeking top-notch image quality and advanced features. Elevate your projects with the KAI-47051-AXA-JP-B2 and experience the benefits of cutting-edge technology at your fingertips.

Feature Benefit Bullets

Pixel Size (um): 5.5X5.5

Smaller pixel size allows for high resolution images with reduced noise and better overall image quality.

Maximum Supply Voltage: 15.5 V

Higher maximum supply voltage provides flexibility in power requirements and enables the sensor to work effectively in various environments.

Master Clock: 40 MHz

Fast master clock speed allows for quick data processing and high-speed image capture.

Body Width: 44.55 inch

Compact body width enables easy integration into different devices and systems.

Sensors or Transducers Type: IMAGE SENSOR, CCD

CCD image sensors are known for their high-quality images and good sensitivity to light, making them ideal for various applications.

Package Shape or Style: RECTANGULAR

Rectangular package shape is commonly used and facilitates easy mounting and integration.

Minimum Supply Voltage: 14.5 V

Lower minimum supply voltage helps in reducing power consumption and heat generation.

Maximum Operating Temperature: 70 °C

High maximum operating temperature ensures the sensor can be used in demanding environments without overheating.

Minimum Operating Temperature: -50 °C

Low minimum operating temperature allows the sensor to function in extreme cold conditions.

Dynamic Range: 66 dB

Wide dynamic range enables the sensor to capture a wide range of light intensities, resulting in detailed images with accurate color representation.

Vertical Pixel: 5280

High vertical pixel count contributes to capturing detailed images with good resolution.

Mounting Feature: THROUGH HOLE MOUNT

Through hole mounting provides secure and stable positioning of the sensor in a device or system.

Technical Specifications

Image Sensors KAI-47051-AXA-JP-B2 attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

IT HAS A SENSITIVITY OF 38 MICRO VOLT PER ELECTRON, ELECTRONIC SHUTTER

Array Type:

INTERLINE

Body Width:

44.55 inch

Body Height:

3.25 mm

Body Length/Diameter:

69.96 mm

Dynamic Range:

66 dB

Frame Rate:

7 fps

Horizontal Pixel:

8856

Master Clock:

40 MHz

Mounting Feature:

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

-50 Cel

Package Shape or Style:

Pixel Size (um):

5.5X5.5

Sensors or Transducers Type:

Maximum Supply Voltage:

15.5 V

Minimum Supply Voltage:

14.5 V

Termination Type:

SOLDER

Vertical Pixel:

5280

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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