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KAI-16000-AAA-JP-B1

Onsemi

KAI-16000-AAA-JP-B1 by Onsemi

KAI-16000-AAA-JP-B1 by Onsemi is an image sensor with 7.4x7.4 um pixel size, 4872 horizontal pixels, and 3248 vertical pixels. It operates b/w -50 to 70 °C and has a dynamic range of 65 dB. Ideal for applications requiring high-resolution imaging in various industries.

Median Price

$16,703.320

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip1Stop

Japan . 2 parts In-Stock

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$3,098.100

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2

$3,098.100

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Arrow

USA . 5 parts In-Stock

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$16,703.320

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5

$16,703.320

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Verical

USA . 5 parts In-Stock

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$16,703.320

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5

$16,703.320

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,343 parts In-Stock

1+ parts

$2,943.195

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1,343

$2,943.195

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Vyrian

USA . 7,888 parts In-Stock

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7,888

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Distributors (Availability)

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AZTECH Wire

Italy . 508 parts In-Stock

1+ parts

$18.510

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508

$18.510

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Corphita

USA . 1,941 parts In-Stock

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$2,788.290

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$2,788.290

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Corohmni

South Africa . 151 parts In-Stock

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$3,098.100

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151

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Kulean Microsystems

USA . 8,333 parts In-Stock

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8,333

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Problanco Electronics

Mexico . 6,662 parts In-Stock

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TANS Electronics

Latvia . 5,730 parts In-Stock

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UHIMA Technologies

Türkiye . 553 parts In-Stock

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553

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Authorized Procurement Solutions

USA . 500 parts In-Stock

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500

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SupplyDigital Components

Austria . 403 parts In-Stock

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Overview

Discover the unparalleled quality and innovation of the KAI-16000-AAA-JP-B1 by Onsemi, a cutting-edge image sensor that sets the standard in its category. With Onsemi's reputation for excellence in manufacturing, this sensor delivers superior performance and reliability for a wide range of applications. From professional photography to industrial imaging, this sensor offers unmatched value, benefits, and advantages to customers seeking top-notch image capture technology. Experience the difference with the KAI-16000-AAA-JP-B1 and elevate your imaging capabilities today.

Feature Benefit Bullets

Pixel Size (um): 7.4X7.4

Higher pixel size allows for better light sensitivity and image clarity.

Maximum Supply Voltage: 15.5 V

Higher supply voltage allows for better performance and flexibility in power management.

Body Width: 44.45 inch

Compact body width makes it suitable for various applications where space is limited.

Sensors or Transducers Type: IMAGE SENSOR,CCD

CCD sensors provide high-quality images with low noise levels.

Body Height: 4.88 mm

Low body height makes it suitable for slim and compact devices.

Package Shape or Style: RECTANGULAR

Rectangular shape is easy to integrate and mount in different systems.

Minimum Supply Voltage: 14.5 V

Lower minimum supply voltage helps in energy efficiency and reduces power consumption.

Maximum Operating Temperature: 70 °C

High maximum operating temperature ensures durability and reliability in various environments.

Horizontal Pixel: 4872

High horizontal pixel count provides detailed and sharp images.

Minimum Operating Temperature: -50 °C

Low minimum operating temperature allows for use in extreme cold conditions.

Dynamic Range: 65 dB

Good dynamic range helps capture both dark and bright areas in the image accurately.

Vertical Pixel: 3248

High vertical pixel count contributes to the overall resolution and quality of the image.

Body Length/Diameter: 45.34 mm

Optimal body length/diameter ratio for a balanced and compact design.

Data Rate: 30 Mbps

High data rate enables fast and efficient transfer of image data.

Termination Type: SOLDER

Solder termination provides secure and reliable connection for long-term usage.

Array Type: INTERLINE

Interline array type offers high-speed image capture capability.

Mounting Feature: THROUGH HOLE MOUNT

Through hole mounting allows for easy and secure installation in various devices.

Technical Specifications

Image Sensors KAI-16000-AAA-JP-B1 attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

IT HAS A SENSITIVITY OF 30 MICRO VOLT PER ELECTRON, ELECTRONIC SHUTTER, IT HAS 1.37 INCH OPTICAL FORMAT

Array Type:

INTERLINE

Body Width:

44.45 inch

Body Height:

4.88 mm

Body Length/Diameter:

45.34 mm

Data Rate:

30 Mbps

Dynamic Range:

65 dB

Horizontal Pixel:

4872

Mounting Feature:

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

-50 Cel

Package Shape or Style:

Pixel Size (um):

7.4X7.4

Sensors or Transducers Type:

Maximum Supply Voltage:

15.5 V

Minimum Supply Voltage:

14.5 V

Termination Type:

SOLDER

Vertical Pixel:

3248

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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