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HGTP12N60C39A

Onsemi

HGTP12N60C39A by Onsemi

The Onsemi HGTP12N60C39A is an N-CHANNEL IGBT transistor with a 600V max collector-emitter voltage. It has a nominal turn-off time of 480ns and turn-on time of 30ns, making it ideal for MOTOR CONTROL applications. This transistor comes in a RECTANGULAR package style with THROUGH-HOLE terminals.

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USA . 1,940 parts In-Stock

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Overview

Enhance your motor control applications with the HGTP12N60C39A from Onsemi. As a trusted manufacturer of Insulated Gate Bipolar Transistors (IGBT), Onsemi delivers superior quality and reliability in every product. This N-CHANNEL transistor offers fast turn-on and turn-off times, making it ideal for efficient motor control. With a maximum collector-emitter voltage of 600V, this transistor provides exceptional performance and durability. Trust Onsemi to provide you with the value and benefits you need for your next project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides insulation and protection for the sensitive components inside.

Polarity or Channel Type: N-CHANNEL

Allows for efficient current flow and control in motor control applications.

Configuration: SINGLE

Simplifies circuit design and implementation.

Transistor Application: MOTOR CONTROL

Specifically designed for motor control applications, ensuring optimal performance.

Package Shape: RECTANGULAR

Facilitates easy mounting and fitting in circuits.

Terminal Form: THROUGH-HOLE

Allows for secure and stable connections.

Nominal Turn Off Time (toff): 480 ns

Provides smooth operation with controlled turn-off time.

No. of Terminals: 3

Sufficient for necessary connections in motor control circuits.

Package Style (Meter): FLANGE MOUNT

Enables easy installation and secure mounting.

Maximum Collector-Emitter Voltage: 600 V

Can handle high voltages, suitable for motor control applications.

Transistor Element Material: SILICON

Provides reliable and consistent performance.

Terminal Position: SINGLE

Simplifies connection setup and layout design.

Case Connection: COLLECTOR

Clearly defines the connection point for the collector.

Nominal Turn On Time (ton): 30 ns

Rapid turn-on time for efficient motor control operations.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) HGTP12N60C39A attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector-Emitter Voltage:

600 V

Configuration:

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

MOTOR CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

480 ns

Nominal Turn On Time (ton):

30 ns

Trade Compliance

HGTP12N60C39A Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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