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HGTP5N120BND

Onsemi

HGTP5N120BND by Onsemi

HGTP5N120BND by Onsemi is an N-CHANNEL IGBT with a max collector-emitter voltage of 1200V and a max collector current of 21A. It has a nominal turn-off time of 357ns, making it ideal for motor control applications. The transistor comes in a rectangular package style with through-hole terminals and matte tin finish.

Median Price

$1.762

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 34,350 parts In-Stock

1+ parts

-

100+ parts

$1.660

1k+ parts

$1.490

10k+ parts

$1.400

34,350

-

$1.660

$1.490

$1.400

Verical

USA . 29,600 parts In-Stock

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-

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$1.863

10k+ parts

$1.750

29,600

-

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$1.863

$1.750

Flip Electronics (Authorized)

USA . 2 parts In-Stock

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Nova Conductors

Japan . 500 parts In-Stock

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$1.470

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500

$1.470

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Digiode

USA . 1,719 parts In-Stock

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$1.748

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1,719

$1.748

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Cyclops Electronics Ltd

UK . 1,812 parts In-Stock

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Vyrian

USA . 870 parts In-Stock

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870

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LWI Electronics Inc

India . 99 parts In-Stock

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99

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ComSIT Distribution GmbH

Germany . 5 parts In-Stock

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Flip Electronics

USA . 2 parts In-Stock

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Distributors (Availability)

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Corohmni

South Africa . 110 parts In-Stock

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$1.412

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110

$1.412

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Corphita

USA . 960 parts In-Stock

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$1.656

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960

$1.656

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Andel Nordic

Denmark . 4,849 parts In-Stock

1+ parts

$10.561

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$10.138

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$10.138

4,849

$10.561

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$10.138

$10.138

Microchip USA

USA . 3,859 parts In-Stock

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$16.965

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3,859

$16.965

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Kepictronics

USA . 83,600 parts In-Stock

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RC Electronics

USA . 49,337 parts In-Stock

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Lixinc

USA . 12,379 parts In-Stock

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Problanco Electronics

Mexico . 8,190 parts In-Stock

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Kulean Microsystems

USA . 6,888 parts In-Stock

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A-Z Elektronik GmbH

Germany . 5,322 parts In-Stock

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TANS Electronics

Latvia . 5,233 parts In-Stock

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Alle Elektronik GmbH

Germany . 3,548 parts In-Stock

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SupplyDigital Components

Austria . 2,677 parts In-Stock

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Supply Digital

USA . 2,026 parts In-Stock

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Glotronic Ltd.

UK . 1,800 parts In-Stock

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Netroflash

USA . 1,000 parts In-Stock

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$1.441

1k+ parts

$1.397

10k+ parts

$1.367

1,000

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$1.441

$1.397

$1.367

iodParts Technologies Inc.

India . 858 parts In-Stock

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Authorized Procurement Solutions

USA . 500 parts In-Stock

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UHIMA Technologies

Türkiye . 118 parts In-Stock

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Overview

Unlock the power of efficient motor control with the HGTP5N120BND by Onsemi. As a leading manufacturer of high-quality Insulated Gate Bipolar Transistors (IGBT), Onsemi combines reliability and innovation in this N-CHANNEL transistor with a built-in diode. Perfect for a wide range of applications, from industrial machinery to renewable energy systems, this IGBT offers exceptional value with its quick turn-on/off times and high collector current capacity. Trust Onsemi for superior performance and durability in every project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation properties and protection for the internal components of the transistor.

Polarity or Channel Type: N-CHANNEL

Offers high efficiency and better performance in motor control applications.

Configuration: SINGLE WITH BUILT-IN DIODE

Simplifies circuit design and reduces the need for additional components.

Transistor Application: MOTOR CONTROL

Designed specifically for motor control applications, ensuring optimal performance in this use case.

Package Shape: RECTANGULAR

Allows for easier mounting and installation in various devices and systems.

Maximum Collector-Emitter Voltage: 1200 V

Can handle high voltage applications and provides robust protection against voltage spikes.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) HGTP5N120BND attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Onsemi

Specs

Additional Features:

LOW CONDUCTION LOSS

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

1200 V

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

MOTOR CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

357 ns

Nominal Turn On Time (ton):

35 ns

Trade Compliance

HGTP5N120BND Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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