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HGTP5N120CND

Harris Semiconductor

HGTP5N120CND by Harris Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 5 A; Transistor Element Material: SILICON; Terminal Position: SINGLE;

Median Price

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Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

< 1k

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Vyrian

USA . 731 parts In-Stock

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Digiode

USA . 60 parts In-Stock

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60

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Inventory MP

USA . 20 parts In-Stock

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Bristol Electronics

USA . 20 parts In-Stock

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Component Electronics Inc.

Canada . 10 parts In-Stock

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Distributors (Availability)

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Andel Nordic

Denmark . 5,373 parts In-Stock

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$5.704

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$5.475

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5,373

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Supply Digital

USA . 2,162 parts In-Stock

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Corphita

USA . 871 parts In-Stock

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Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) HGTP5N120CND attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Harris Semiconductor

Specs

Additional Features:

LOW CONDUCTION LOSS

Maximum Collector Current (IC):

5 A

Maximum Collector-Emitter Voltage:

1200 V

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Trade Compliance

HGTP5N120CND Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

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