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HGT1S11N120CNS

Onsemi

HGT1S11N120CNS by Onsemi

HGT1S11N120CNS by Onsemi is an N-CHANNEL IGBT for POWER CONTROL applications. It features a Max VCEsat of 2.4V, Max Collector-Emitter Voltage of 1200V, and Max Power Dissipation of 298W. With a small outline package style and GULL WING terminals, it operates b/w -55 to 150 °C temperature range.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

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Sogenti Electronics

Canada . 1,348 parts In-Stock

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Vyrian

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Digiode

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Specialty Parts & Electronic Components, Inc. (S.P.E.C.)

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Native Components

USA . 359 parts In-Stock

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Northwest PG Solutions

USA . 308 parts In-Stock

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Problanco Electronics

Mexico . 6,534 parts In-Stock

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Kulean Microsystems

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Corphita

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Supply Digital

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TANS Electronics

Latvia . 2,166 parts In-Stock

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SupplyDigital Components

Austria . 1,175 parts In-Stock

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Corohmni

South Africa . 72 parts In-Stock

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UHIMA Technologies

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Overview

Discover the power of the HGT1S11N120CNS by Onsemi, a top-quality Insulated Gate Bipolar Transistor that revolutionizes power control applications. With Onsemi's reputation for excellence in semiconductor manufacturing, this N-CHANNEL transistor offers unmatched reliability and performance. Whether you need to optimize power systems or enhance motor control, this device's fast rise time and low VCEsat provide the efficiency and precision you need. Experience the difference with Onsemi's HGT1S11N120CNS – where quality meets innovation.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: N-CHANNEL

N-channel transistors typically have lower on-resistance and higher efficiency, making them advantageous for power control applications.

Maximum Power Dissipation (Abs): 298 W

With a high power dissipation capability, this transistor can handle large power loads without overheating.

Maximum Collector-Emitter Voltage: 1200 V

The high collector-emitter voltage rating allows this transistor to be used in high voltage applications with ease.

Maximum Collector Current (IC): 43 A

Capable of handling high collector currents, this transistor is suitable for power control applications that require high current handling capability.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) HGT1S11N120CNS attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Onsemi

Specs

Additional Features:

AVALANCHE RATED, LOW CONDUCTION LOSS

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

1200 V

Configuration:

Maximum Fall Time (tf):

400 ns

Maximum Gate-Emitter Voltage:

20 V

JEDEC-95 Code:

TO-263AB

JESD-30 Code:

R-PSSO-G2

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Rise Time (tr):

16 ns

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Maximum Turn Off Time (toff):

680 ns

Nominal Turn Off Time (toff):

550 ns

Maximum Turn On Time (ton):

40 ns

Nominal Turn On Time (ton):

33 ns

Maximum VCEsat:

2.4 V

Trade Compliance

HGT1S11N120CNS Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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