Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
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Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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HGT1S12N60C3DS9A by Onsemi is an N-CHANNEL IGBT with 600V VCE, 24A IC, and 2.2V VCEsat. Ideal for POWER CONTROL applications, it has a built-in diode, small outline package style, and operates b/w -40 to 150 °C.
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Corohmni
Provides durability and protection for the internal components of the IGBT.
Enhances performance and efficiency for power control applications.
Simplifies circuit design and improves overall system reliability.
Specifically designed for power control applications, ensuring optimal performance.
Facilitates easy installation and mounting on circuit boards.
Low VCEsat reduces power loss and improves efficiency.
Allows for space-efficient mounting on PCBs.
Provides secure and reliable connections.
Fast fall time improves switching speed and performance.
Optimal turn off time for efficient power control.
Simplified connection requirements for ease of use.
Handles high power levels without overheating.
Compact size for space-constrained applications.
Can operate reliably under high temperature conditions.
Suitable for high voltage power control applications.
Provides high reliability and performance for power control.
Provides optimal gate control for efficient operation.
Can operate in extreme temperature conditions.
Handles high current levels for power control applications.
Optimal threshold voltage for reliable gate control.
Efficient turn off time for power control applications.
Simplified connection layout for ease of use.
Specific case connection for power control applications.
Fast turn on time for quick power control response.
Insulated Gate Bipolar Transistors (IGBT) HGT1S12N60C3DS9A attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Onsemi
Additional Features:
Case Connection:
Maximum Collector Current (IC):
Maximum Collector-Emitter Voltage:
Configuration:
Maximum Fall Time (tf):
Maximum Gate-Emitter Threshold Voltage:
Maximum Gate-Emitter Voltage:
JEDEC-95 Code:
JESD-30 Code:
No. of Elements:
No. of Terminals:
Maximum Operating Temperature:
Minimum Operating Temperature:
Package Body Material:
Package Shape:
Package Style (Meter):
Polarity or Channel Type:
Maximum Power Dissipation (Abs):
Surface Mount:
Terminal Form:
Terminal Position:
Transistor Application:
Transistor Element Material:
Maximum Turn Off Time (toff):
Nominal Turn Off Time (toff):
Nominal Turn On Time (ton):
Maximum VCEsat:
HGT1S12N60C3DS9A Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).
President, CEO
Hassane El-Khoury
Executive VP, CFO, Treasurer
Thad Trent
Senior VP
Ross F. Jatou
Aizu Fab
Fabrication
Fab Initiation
1995
Japan
Aizu Wakamatsu
Wafer Capacity
52,000
Si/EPI Fab
2018
Czech Republic
Rožnov pod Radhoštěm
10,000
Expansion Phase 1 for SiC / EPI
2019
14,500
Expansion Phase 2 for SiC / EPI
2024
SiC Fab
2022
USA
Hudson
Bucheon
2013
South Korea
61,000
ISMF - Malaysia
1990
Malaysia
Seremban
95,000
Roznov Device Fab
1987
80,000
Fab 10
2002
East Fishkill
15,000
Burlington
1986
Canada
Gresham
1998
45,000
Bucheon 150mm
2000
50,000
Rochester
1983
Nampa
Pennsylvania
1997
Mountain Top
36,000
2N7002
STMicroelectronics
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Maximum Drain Current (ID): .2 A; Transistor Application: SWITCHING;
LM358MX
ROHM
OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: GULL WING; No. of Terminals: 8; Package Code: LSOP; Package Shape: RECTANGULAR;
1N4148
Bkc Semiconductors
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
BSS138
Good-ark Electronics
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain-Source On Resistance: 6 ohm; Minimum DS Breakdown Voltage: 50 V; Operating Mode: ENHANCEMENT MODE;
General Semiconductor
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; JEDEC-95 Code: TO-236AB; Qualification: Not Qualified; Package Style (Meter): SMALL OUTLINE;
SS14
Promax-johnton
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
BSS138BKW,115
Nexperia
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Finish: TIN; No. of Terminals: 3; Additional Features: LOGIC LEVEL COMPATIBLE;
Yangzhou Yangjie Electronics
RECTIFIER DIODE; Surface Mount: YES; Technology: SCHOTTKY; No. of Phases: 1; Config: SINGLE; Maximum Operating Temperature: 125 Cel;
1N4148WS
General Instrument
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
BSS84-7-F
SPC TECHNOLOGY/ MULTICOMP
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Package Shape: RECTANGULAR; Transistor Element Material: SILICON;
LM358D-T
Philips Semiconductors
OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: GULL WING; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR;
Micro Commercial Components
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Package Shape: RECTANGULAR; Terminal Position: DUAL;
1552200253
Molex
WIRE AND CABLE;
DS18B20+
Analog Devices
DS18B20+ by Analog Devices is a 12-bit temperature sensor with 3.3/5V supply, -55 to 125°C range, and ±0.50°C accuracy. It features a 1-Wire interface for digital output and is commonly used in applications requiring precise temperature monitoring in various industries.
AT90CAN128-16AU
Atmel
MICROCONTROLLER, RISC; Temperature Grade: INDUSTRIAL; Terminal Form: GULL WING; No. of Terminals: 64; Package Code: TQFP; Package Shape: SQUARE;
BSS138NH6327XTSA2
Infineon Technologies
BSS138NH6327XTSA2 by Infineon is a N-CHANNEL FET with 60V DS Breakdown Voltage, ideal for small signal applications. Operating in Enhancement Mode, it has 0.36W Power Dissipation and 3.5 ohm Drain-Source Resistance. With Gull Wing terminals and AEC-Q101 reference standard, it's suitable for automotive electronics due to its high temperature range of -55 to 150 °C.
2N2222A
Swampscott Electronics
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
LIS2DH12TR
LIS2DH12TR by STMicroelectronics is a 3-axis accelerometer with digital voltage output. It operates b/w -40 to 85°C, with supply voltage range of 1.71-3.6V. Ideal for applications requiring precise motion sensing in compact spaces like wearables and IoT devices.
1N4148WT
Bytesonic Electronics
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
LL4148
Lite-on Semiconductor
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
IRG4PC50FDPBF
IRG4PC50FDPBF by Infineon Technologies is an N-CHANNEL IGBT transistor with a max collector-emitter voltage of 600V and a max power dissipation of 200W. It has a single configuration with built-in diode, suitable for power control applications. With a nominal turn-off time of 660ns and max fall time of 210ns, it offers efficient switching performance in high-power systems.
IXXX300N60C3
Littelfuse
IXXX300N60C3 by Littelfuse is an N-CHANNEL IGBT with 600V VCEsat, 510A IC, and 2300W power dissipation. Ideal for POWER CONTROL applications, it has a fast turn-off time of 278ns and operates b/w -55 to 175 °C temperatures.
FGAF40N60UFTU
Fairchild Semiconductor
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 100 W; Maximum Collector Current (IC): 40 A; Case Connection: ISOLATED;
IRGPS40B120UPBF
International Rectifier
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 595 W; Maximum Collector Current (IC): 80 A; Nominal Turn On Time (ton): 115 ns;
IHW15N120E1XKSA1
IHW15N120E1XKSA1 by Infineon Technologies is an N-CHANNEL IGBT with a max Collector-Emitter Voltage of 1200V and a Max Collector Current of 30A. It is designed for POWER CONTROL applications, featuring a Nominal Turn Off Time of 1450ns. The transistor comes in a RECTANGULAR package style with THROUGH-HOLE terminals, making it suitable for various power control systems.
IGW15N120H3FKSA1
IGW15N120H3FKSA1 by Infineon Technologies is an N-CHANNEL IGBT transistor with a max collector-emitter voltage of 1200V and a max collector current of 30A. It has a nominal turn-off time of 370ns and a turn-on time of 49ns, making it suitable for power control applications requiring fast switching speeds. The transistor comes in a rectangular package style with through-hole terminals, ideal for flange mount installations at temperatures up to 175°C.
FS50R12KE3
Eupec & Kg
N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 270 W; Maximum Collector Current (IC): 75 A; Package Shape: RECTANGULAR;
FGH40T120SMD
N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): 555 W; Maximum Collector Current (IC): 80 A; Terminal Finish: MATTE TIN; Maximum Gate-Emitter Threshold Voltage: 7.5 V;
APT45GP120J
Microchip Technology
APT45GP120J by Microchip Technology is an N-CHANNEL IGBT transistor with a max collector-emitter voltage of 1200V and a max power dissipation of 329W. It has a nominal turn-off time of 230ns and is suitable for power control applications. The transistor comes in a rectangular package style with flange mount, making it ideal for high-power electronic systems.
CM600DU-12NFH
Mitsubishi Electric
Mitsubishi Electric's CM600DU-12NFH is a N-CHANNEL IGBT with 2 elements, each with built-in diode. It has a max VCEsat of 2.7V and can handle up to 600A collector current. Ideal for power control applications, this IGBT operates at a max temperature of 150°C and has an isolated case connection.
F475R12KS4BOSA1
F475R12KS4BOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 2 banks, series connected, center tap, and 2 elements with built-in diode. It has a max VCEsat of 3.75V and a max collector-emitter voltage of 1200V, making it ideal for power control applications requiring high voltage handling capabilities. With a nominal turn-off time of 390ns and a max power dissipation of 500W, this rectangular package transistor offers efficient performance in various power control systems.
IRG4PC50UDPBF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 200 W; Maximum Collector Current (IC): 55 A; No. of Terminals: 3;
STGWA40M120DF3
STGWA40M120DF3 by STMicroelectronics is an N-CHANNEL IGBT with a max power dissipation of 468W. It operates at a max temperature of 175°C and has a collector-emitter voltage of 1200V. It is commonly used in high-power applications such as motor drives and inverters.
APT50GP60JDQ2
Microsemi
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 329 W; Maximum Collector Current (IC): 100 A; Maximum Collector-Emitter Voltage: 600 V;
APT85GR120J
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 543 W; Maximum Collector Current (IC): 116 A; Nominal Turn On Time (ton): 113 ns;
IRG7PH42UD2PBF
IRG7PH42UD2PBF by Infineon Technologies is an N-CHANNEL IGBT with a max collector-emitter voltage of 1200V and a max gate-emitter voltage of 30V. It is designed for power control applications and has a max power dissipation of 321W.
FGH40N60UFDTU
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 290 W; Maximum Collector Current (IC): 80 A; Nominal Turn On Time (ton): 110 ns;
2MBI150NC-120
Fuji Electric
Fuji Electric's 2MBI150NC-120 is a N-CHANNEL IGBT with 2 SERIES CONNECTED elements. It has a max VCEsat of 3.3V, IC of 150A, and Pmax of 1100W. Ideal for POWER CONTROL applications due to its fast ton (650ns) and toff (850ns) times.
FGY75T120SWD
Onsemi
Insulated Gate Bipolar Transistors;
FP25R12W2T4P_B11ENG
Infineon's FP25R12W2T4P_B11ENG IGBT features 1200V VCEsat, 520ns toff, and 47ns ton. Ideal for high-power applications in industries like automotive, renewable energy, and industrial automation due to its N-Channel polarity and -40°C to 150°C operating temperature range.
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HGT1S10N120BNST
HGT1S10N120BNST by Onsemi is an N-CHANNEL IGBT transistor with a max VCEsat of 4.2V and a max collector-emitter voltage of 1200V. It is designed for motor control applications, featuring a rise time of 15ns and a power dissipation of 298W. This single configuration transistor operates b/w -55 to 150 °C and has a gate-emitter voltage of up to 20V.
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 298 W; Maximum Collector Current (IC): 35 A; JESD-609 Code: e3;
HGT1S10N120BNS
Intersil
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 198 W; Maximum Collector Current (IC): 35 A; Package Shape: RECTANGULAR;
Harris Semiconductor
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 35 A; Transistor Application: MOTOR CONTROL; Package Style (Meter): SMALL OUTLINE;
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 298 W; Maximum Collector Current (IC): 35 A; Maximum Gate-Emitter Voltage: 20 V;
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 298 W; Maximum Collector Current (IC): 35 A; Terminal Form: GULL WING;
HGT1S20N60C3S9A
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 45 A; Maximum Collector-Emitter Voltage: 600 V; Package Shape: RECTANGULAR;
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 164 W; Maximum Collector Current (IC): 45 A; Qualification: Not Qualified;
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 164 W; Maximum Collector Current (IC): 45 A; JESD-30 Code: R-PSSO-G2;
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 164 W; Maximum Collector Current (IC): 45 A; Case Connection: COLLECTOR;
HGT1S20N60C3S
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 164 W; Maximum Collector Current (IC): 45 A; JEDEC-95 Code: TO-263AB;
HGT1S11N120CNS
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 298 W; Maximum Collector Current (IC): 43 A; Terminal Position: SINGLE;
HGT1S3N60A4DS
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 70 W; Maximum Collector Current (IC): 17 A; JESD-30 Code: R-PSSO-G2;
HGT1S11N120CNS9A
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 298 W; Maximum Collector Current (IC): 43 A; JESD-30 Code: R-PSSO-G2;
HGT1S12N60A4DS
HGT1S12N60A4DS by Onsemi is an N-CHANNEL IGBT with 600V VCE, 54A IC, and 2.7V VCEsat. Ideal for POWER CONTROL applications, it features a single configuration with built-in diode and operates at temperatures ranging from -55 to 150 °C.
HGT1S7N60A4DS
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 125 W; Maximum Collector Current (IC): 34 A; JESD-30 Code: R-PSSO-G2;
HGT1S12N60A4DS9A
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 167 W; Maximum Collector Current (IC): 54 A; Terminal Position: SINGLE;
HGT1S12N60A4S9A
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 167 W; Maximum Collector Current (IC): 54 A; Transistor Application: POWER CONTROL;
HGT1S12N60C3DS
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 104 W; Maximum Collector Current (IC): 24 A; Terminal Form: GULL WING;
HGT1S12N60C3S
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 104 W; Maximum Collector Current (IC): 24 A; Additional Features: LOW CONDUCTION LOSS;
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