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DTA12G

Onsemi

DTA12G by Onsemi

DTA12G by Onsemi is a TRIAC with 1.4V max on-state voltage, 50mA max DC gate trigger current, and 2mA max leakage current. Ideal for applications requiring a trigger device with 12A max RMS on-state current, 3V max DC gate trigger voltage, and 600V repetitive peak off-state voltage at temperatures up to 125 °C.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 1,264 parts In-Stock

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Digiode

USA . 185 parts In-Stock

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Distributors (Availability)

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Native Components

USA . 485 parts In-Stock

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$0.410

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$0.394

485

$0.410

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$0.394

Northwest PG Solutions

USA . 248 parts In-Stock

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$0.451

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$0.398

248

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$0.398

Kulean Microsystems

USA . 8,117 parts In-Stock

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TANS Electronics

Latvia . 4,762 parts In-Stock

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SupplyDigital Components

Austria . 2,687 parts In-Stock

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Corphita

USA . 1,969 parts In-Stock

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Problanco Electronics

Mexico . 1,147 parts In-Stock

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UHIMA Technologies

Türkiye . 635 parts In-Stock

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Corohmni

South Africa . 497 parts In-Stock

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Overview

Unleash the power of innovation with the DTA12G by Onsemi. Crafted with precision and expertise, this TRIAC device offers unmatched quality and reliability for a wide range of applications. From lighting control to motor speed regulation, this product provides seamless performance and efficiency. Elevate your projects with the exceptional value and benefits that only Onsemi can deliver. Trust in the DTA12G to exceed your expectations and take your designs to the next level.

Feature Benefit Bullets

Maximum On-state Voltage: 1.4 V

Low on-state voltage helps in reducing power consumption and heat generation, making the product more efficient.

Maximum DC Gate Trigger Current: 50 mA

A higher gate trigger current ensures reliable and consistent switching of the TRIAC, increasing the overall performance of the product.

Maximum Leakage Current: 2 mA

Low leakage current ensures minimal power loss when the TRIAC is in the off-state, contributing to energy efficiency.

Maximum Operating Temperature: 125 °C

The high maximum operating temperature allows the TRIAC to function in a wide range of environments, enhancing its versatility.

Trigger Device Type: TRIAC

Being a TRIAC, this product is suitable for AC switching applications, providing bidirectional control of current flow.

Maximum RMS On-state Current: 12 A

With a high maximum on-state current, the TRIAC can handle large loads without overheating or performance degradation.

Maximum DC Gate Trigger Voltage: 3 V

The low gate trigger voltage ensures efficient control of the TRIAC, enabling precise switching with minimal power consumption.

Repetitive Peak Off-state Voltage: 600 V

The high off-state voltage rating allows the TRIAC to withstand high voltage spikes, ensuring reliable operation in demanding applications.

Technical Specifications

Triode For Alternating Current (TRIAC) DTA12G attributes and parameters. Explore more Triode For Alternating Current (TRIAC) devices from Onsemi

Specs

Maximum DC Gate Trigger Current:

50 mA

Maximum DC Gate Trigger Voltage:

3 V

Maximum Leakage Current:

2 mA

Maximum On-state Voltage:

1.4 V

Maximum Operating Temperature:

125 Cel

Maximum RMS On-state Current:

12 A

Repetitive Peak Off-state Voltage:

600 V

Sub-Category:

TRIACs

Surface Mount:

NO

Trigger Device Type:

Trade Compliance

DTA12G Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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