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MAC4DSM

Onsemi

MAC4DSM by Onsemi

MAC4DSM by Onsemi is a TRIAC with max RMS on-state current of 4A, DC gate trigger voltage of 1.3V, and repetitive peak off-state voltage of 600V. Ideal for AC power control applications due to its surface mount capability and wide operating temperature range from -40 °C to 125°C.

Median Price

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Lifecycle Status

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3

In-Stock Inventory

1k+

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Vyrian

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Electronic Expediters

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Digiode

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Metaverse IC Inc.

Canada . 56,986 parts In-Stock

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TANS Electronics

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SupplyDigital Components

Austria . 6,157 parts In-Stock

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A-Z Elektronik GmbH

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Alle Elektronik GmbH

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Kulean Microsystems

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Problanco Electronics

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Corphita

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UHIMA Technologies

Türkiye . 894 parts In-Stock

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Overview

The MAC4DSM by Onsemi is a top-of-the-line Triode For Alternating Current (TRIAC) that offers unparalleled quality and reliability. With a maximum RMS on-state current of 4A and a repetitive peak off-state voltage of 600V, this surface mount device is perfect for a wide range of applications. Whether you're looking to control power in lighting, heating, or motor control systems, the MAC4DSM is the ideal solution. Trust Onsemi's reputation for excellence and experience the value and benefits that this TRIAC can bring to your projects.

Feature Benefit Bullets

Maximum DC Gate Trigger Current: 10 mA

With a high maximum DC gate trigger current, this TRIAC can easily be activated with a low power signal, making it efficient and easy to control.

Surface Mount: YES

Being surface mountable allows for easy installation and space-saving designs, making it suitable for compact applications.

Maximum Leakage Current: 0.01 mA

The low maximum leakage current ensures minimal power loss when the device is in the off-state, improving overall efficiency and reducing energy consumption.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature, this TRIAC can withstand elevated temperature environments, making it suitable for a wide range of industrial applications.

Trigger Device Type: TRIAC

Being a TRIAC allows this device to control AC power with high efficiency and accuracy, making it a reliable choice for AC control applications.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature ensures reliable performance even in extreme cold conditions, making it suitable for a variety of environments.

Maximum RMS On-state Current: 4 A

With a high maximum RMS on-state current, this TRIAC can handle heavy loads with ease, making it suitable for high-power applications.

Maximum DC Gate Trigger Voltage: 1.3 V

Having a low maximum DC gate trigger voltage ensures efficient triggering with minimal power consumption, making it ideal for low-power applications.

Repetitive Peak Off-state Voltage: 600 V

With a high repetitive peak off-state voltage, this TRIAC can handle high voltage applications safely and reliably.

Minimum Critical Rate of Rise of Off-state Voltage: 50 V/us

The minimum critical rate of rise of off-state voltage ensures fast and reliable switching, making it ideal for applications requiring quick response times.

Maximum Holding Current: 15 mA

The high maximum holding current ensures the TRIAC remains in the on-state reliably, even in noisy environments, making it a dependable choice for various applications.

Technical Specifications

Triode For Alternating Current (TRIAC) MAC4DSM attributes and parameters. Explore more Triode For Alternating Current (TRIAC) devices from Onsemi

Specs

Minimum Critical Rate of Rise of Off-state Voltage:

50 V/us

Maximum DC Gate Trigger Current:

10 mA

Maximum DC Gate Trigger Voltage:

1.3 V

Maximum Holding Current:

15 mA

Maximum Leakage Current:

.01 mA

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Maximum RMS On-state Current:

4 A

Repetitive Peak Off-state Voltage:

600 V

Sub-Category:

TRIACs

Surface Mount:

YES

Trigger Device Type:

Trade Compliance

MAC4DSM Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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