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MAC4DCM

Onsemi

MAC4DCM by Onsemi

MAC4DCM by Onsemi is a TRIAC with 500mA DC Gate Trigger Current, 4A RMS On-state Current, and 600V Repetitive Peak Off-state Voltage. Ideal for AC power control applications due to its -40 to 125 °C operating temperature range and surface mount capability.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 1,939 parts In-Stock

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Digiode

USA . 1,081 parts In-Stock

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Kepictronics

USA . 13,000 parts In-Stock

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Problanco Electronics

Mexico . 6,525 parts In-Stock

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TANS Electronics

Latvia . 6,470 parts In-Stock

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SupplyDigital Components

Austria . 5,035 parts In-Stock

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Kulean Microsystems

USA . 4,096 parts In-Stock

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UHIMA Technologies

Türkiye . 645 parts In-Stock

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Corphita

USA . 591 parts In-Stock

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Corohmni

South Africa . 186 parts In-Stock

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Overview

Experience the power of reliable performance with the MAC4DCM by Onsemi. As a leading manufacturer in the industry, Onsemi brings you a high-quality Triode For Alternating Current (TRIAC) that is perfect for a wide range of applications. With a maximum RMS On-state Current of 4A and a Repetitive Peak Off-state Voltage of 600V, this product offers exceptional value and benefits to customers. Say goodbye to downtime and hello to seamless operation with the MAC4DCM.

Feature Benefit Bullets

Maximum DC Gate Trigger Current: 500 mA

High gate trigger current ensures reliable and consistent operation of the TRIAC.

Surface Mount: YES

Surface mount capability allows for easy and efficient installation on circuit boards.

Maximum Leakage Current: 0.01 mA

Low leakage current helps in reducing power wastage and improves overall energy efficiency.

Maximum Operating Temperature: 125 °C

High maximum operating temperature ensures stable performance even in demanding environments.

Trigger Device Type: TRIAC

Being a TRIAC, this device can control power in both directions efficiently, making it versatile for various applications.

Minimum Operating Temperature: -40 °C

Wide operating temperature range allows for usage in extreme cold conditions as well.

Maximum RMS On-state Current: 4 A

High RMS on-state current rating enables the TRIAC to handle moderate to high power loads effectively.

Maximum DC Gate Trigger Voltage: 5 V

Low gate trigger voltage ensures easy interfacing with control circuits and reduces power consumption.

Repetitive Peak Off-state Voltage: 600 V

High off-state voltage rating provides reliable insulation against high voltages in off state.

Minimum Critical Rate of Rise of Off-state Voltage: 500 V/us

Fast rate of rise of off-state voltage ensures quick response and protection against voltage transients.

Maximum Holding Current: 35 mA

Sufficient holding current ensures the TRIAC remains in conducting state even under varying load conditions.

Technical Specifications

Triode For Alternating Current (TRIAC) MAC4DCM attributes and parameters. Explore more Triode For Alternating Current (TRIAC) devices from Onsemi

Specs

Minimum Critical Rate of Rise of Off-state Voltage:

500 V/us

Maximum DC Gate Trigger Current:

500 mA

Maximum DC Gate Trigger Voltage:

5 V

Maximum Holding Current:

35 mA

Maximum Leakage Current:

.01 mA

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Maximum RMS On-state Current:

4 A

Repetitive Peak Off-state Voltage:

600 V

Sub-Category:

TRIACs

Surface Mount:

YES

Trigger Device Type:

Trade Compliance

MAC4DCM Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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