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TIC263A

Texas Instruments

TIC263A by Texas Instruments

TIC263A by Texas Instruments is a TRIAC with 25A RMS current, 100V repetitive peak off-state voltage, and 2.5V DC gate trigger voltage. It operates b/w -40°C to 125°C, making it suitable for AC power control applications like dimmers and motor speed controllers.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 5,801 parts In-Stock

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Digiode

USA . 3,373 parts In-Stock

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3,373

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Distributors (Availability)

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Parana Technologies

USA . 204 parts In-Stock

1+ parts

$2.536

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-

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$3.024

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204

$2.536

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$3.024

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DigiPath Technology Company

USA . 1,934 parts In-Stock

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$2.792

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$2.792

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ChromeModa Solutions

Germany . 4,121 parts In-Stock

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$2.849

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$2.336

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$2.849

$2.336

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IDEA Electronic Components Group

UK . 6 parts In-Stock

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$2.849

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$2.564

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6

$2.849

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$2.564

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AZTECH Wire

Italy . 516 parts In-Stock

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$5.453

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516

$5.453

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Ampacity Inc.

Singapore . 813 parts In-Stock

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$9.100

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813

$9.100

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Semicontronic

India . 332 parts In-Stock

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$11.100

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$10.822

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$10.767

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332

$11.100

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$10.767

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One Stop Electronics

USA . 959 parts In-Stock

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$25.100

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959

$25.100

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Corphita

USA . 1,215 parts In-Stock

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Corohmni

South Africa . 321 parts In-Stock

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Overview

Unleash the power of innovation with the TIC263A TRIAC from Texas Instruments. Designed for precision and reliability, this versatile component offers unmatched performance in a wide range of applications. Whether you're looking to control AC power in lighting systems, motor speed controls, or heating elements, the TIC263A delivers seamless operation and enhanced efficiency. Trust in Texas Instruments' reputation for excellence and elevate your projects with the superior quality and value of the TIC263A.

Feature Benefit Bullets

Maximum DC Gate Trigger Current: 50 mA

The low trigger current requirement means this product can be easily controlled and activated with standard control circuits.

Maximum Leakage Current: 2 mA

Low leakage current ensures efficient operation and minimal power loss when the device is in the off-state.

Maximum Operating Temperature: 125 °C

The high operating temperature range makes this product suitable for a wide range of industrial and commercial applications where temperature fluctuations may occur.

Minimum Operating Temperature: -40 °C

The ability to operate at low temperatures allows this product to be used in extreme environments without sacrificing performance.

Maximum RMS On-state Current: 25 A

With a high maximum RMS on-state current, this product is capable of handling heavy loads and high power applications.

Maximum DC Gate Trigger Voltage: 2.5 V

The low trigger voltage requirement ensures compatibility with a wide range of control systems and simplifies the design of the overall circuit.

Repetitive Peak Off-state Voltage: 100 V

The high repetitive peak off-state voltage rating ensures reliable operation and protection against voltage transients and spikes.

Maximum Holding Current: 50 mA

The ability to sustain a holding current enables stable operation and prevents unwanted switching events, ensuring proper functionality.

Technical Specifications

Triode For Alternating Current (TRIAC) TIC263A attributes and parameters. Explore more Triode For Alternating Current (TRIAC) devices from Texas Instruments

Specs

Maximum DC Gate Trigger Current:

50 mA

Maximum DC Gate Trigger Voltage:

2.5 V

Maximum Holding Current:

50 mA

Maximum Leakage Current:

2 mA

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Peak Reflow Temperature (C):

NOT SPECIFIED

Maximum RMS On-state Current:

25 A

Repetitive Peak Off-state Voltage:

100 V

Sub-Category:

TRIACs

Surface Mount:

NO

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trigger Device Type:

Trade Compliance

TIC263A Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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