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2N5275

Texas Instruments

2N5275 by Texas Instruments

2N5275 by Texas Instruments is a TRIAC with 25A RMS on-state current, 600V repetitive peak off-state voltage, and 3.5V max DC gate trigger voltage. It operates b/w -40°C to 125°C and is ideal for AC power control applications requiring up to 150mA gate trigger current.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 5,218 parts In-Stock

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Digiode

USA . 1,774 parts In-Stock

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Native Components

USA . 324 parts In-Stock

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$2.080

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324

$2.080

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Ampacity Inc.

Singapore . 1,396 parts In-Stock

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$2.100

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$2.100

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Northwest PG Solutions

USA . 732 parts In-Stock

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$2.288

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732

$2.288

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Parana Technologies

USA . 1,469 parts In-Stock

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$3.159

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$3.677

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1,469

$3.159

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$3.677

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DigiPath Technology Company

USA . 2,007 parts In-Stock

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$3.478

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2,007

$3.478

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ChromeModa Solutions

Germany . 4,563 parts In-Stock

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$3.549

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$2.910

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4,563

$3.549

$2.910

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IDEA Electronic Components Group

UK . 1,800 parts In-Stock

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$3.549

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$3.194

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$3.549

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One Stop Electronics

USA . 1,596 parts In-Stock

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$10.100

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$10.100

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AZTECH Wire

Italy . 683 parts In-Stock

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$17.455

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683

$17.455

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Semicontronic

India . 1,040 parts In-Stock

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$29.100

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$28.372

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$28.227

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$29.100

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Corphita

USA . 2,065 parts In-Stock

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Corohmni

South Africa . 350 parts In-Stock

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Overview

Unlock the power of reliable performance with Texas Instruments' 2N5275 TRIAC. Perfect for a variety of applications, this versatile component offers superior quality and durability. With a maximum RMS on-state current of 25A and a repetitive peak off-state voltage of 600V, this TRIAC is designed to deliver consistent results. Trust in Texas Instruments' reputation for excellence and choose the 2N5275 for your next project.

Feature Benefit Bullets

Maximum DC Gate Trigger Current: 150 mA

The high maximum DC gate trigger current ensures reliable and consistent triggering of the TRIAC, allowing for smooth operation.

Maximum Leakage Current: 1 mA

The low maximum leakage current indicates minimal power loss and ensures efficiency of the TRIAC.

Maximum Operating Temperature: 125 °C

The high maximum operating temperature allows for reliable performance even in high temperature environments.

Trigger Device Type: TRIAC

Being a TRIAC, this product is designed for alternating current applications, making it a suitable choice for AC power control.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature ensures this TRIAC can function effectively even in cold conditions.

Maximum RMS On-state Current: 25 A

The high maximum RMS on-state current capacity enables this TRIAC to handle heavy loads with ease.

Maximum DC Gate Trigger Voltage: 3.5 V

The low maximum DC gate trigger voltage ensures efficient triggering of the TRIAC with minimal power consumption.

Repetitive Peak Off-state Voltage: 600 V

The high repetitive peak off-state voltage rating makes this TRIAC suitable for applications with high voltage requirements.

Maximum Holding Current: 100 mA

The maximum holding current capacity ensures the TRIAC can maintain its on-state conduction even under varying conditions.

Technical Specifications

Triode For Alternating Current (TRIAC) 2N5275 attributes and parameters. Explore more Triode For Alternating Current (TRIAC) devices from Texas Instruments

Specs

Maximum DC Gate Trigger Current:

150 mA

Maximum DC Gate Trigger Voltage:

3.5 V

Maximum Holding Current:

100 mA

Maximum Leakage Current:

1 mA

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Maximum RMS On-state Current:

25 A

Repetitive Peak Off-state Voltage:

600 V

Sub-Category:

TRIACs

Surface Mount:

NO

Trigger Device Type:

Trade Compliance

2N5275 Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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