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2N5274

Texas Instruments

2N5274 by Texas Instruments

2N5274 by Texas Instruments is a TRIAC with max. DC gate trigger current of 150mA, max. leakage current of 1mA, and max. operating temp of 125°C. It is used as a trigger device in applications requiring a max RMS on-state current of 25A and repetitive peak off-state voltage of 400V.

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3

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1k+

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Vyrian

USA . 4,804 parts In-Stock

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Digiode

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Electronic Expediters

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Native Components

USA . 779 parts In-Stock

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$0.954

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Northwest PG Solutions

USA . 1,616 parts In-Stock

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Parana Technologies

USA . 948 parts In-Stock

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DigiPath Technology Company

USA . 349 parts In-Stock

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IDEA Electronic Components Group

UK . 1,465 parts In-Stock

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ChromeModa Solutions

Germany . 198 parts In-Stock

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AZTECH Wire

Italy . 428 parts In-Stock

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One Stop Electronics

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Overview

Enhance your electrical projects with the high-quality 2N5274 TRIAC by Texas Instruments. Designed for efficiency and reliability, this TRIAC offers precise control over alternating current applications. From dimmer switches to motor speed controls, the 2N5274 provides seamless functionality and exceptional performance. Trust in Texas Instruments' reputation for excellence and unlock the full potential of your projects with the versatile 2N5274 TRIAC.

Feature Benefit Bullets

Maximum DC Gate Trigger Current: 150 mA

High gate trigger current allows for reliable triggering of the TRIAC, ensuring consistent performance.

Maximum Leakage Current: 1 mA

Low leakage current helps in reducing power consumption and improving efficiency of the product.

Maximum Operating Temperature: 125 °C

Wide operating temperature range enables the product to function in various environmental conditions without overheating.

Trigger Device Type: TRIAC

TRIAC trigger device ensures smooth and efficient control of AC power, making it ideal for AC applications.

Minimum Operating Temperature: -45 °C

Low minimum operating temperature allows the product to function even in extreme cold conditions.

Maximum RMS On-state Current: 25 A

High on-state current rating allows the product to handle high current loads with ease.

Maximum DC Gate Trigger Voltage: 3.5 V

Low gate trigger voltage ensures efficient triggering of the TRIAC with minimal power consumption.

Repetitive Peak Off-state Voltage: 400 V

High off-state voltage rating ensures reliable and safe operation of the product, even in high voltage applications.

Maximum Holding Current: 100 mA

High holding current ensures the TRIAC remains in the on-state even after the gate signal is removed, providing stability in operation.

Technical Specifications

Triode For Alternating Current (TRIAC) 2N5274 attributes and parameters. Explore more Triode For Alternating Current (TRIAC) devices from Texas Instruments

Specs

Maximum DC Gate Trigger Current:

150 mA

Maximum DC Gate Trigger Voltage:

3.5 V

Maximum Holding Current:

100 mA

Maximum Leakage Current:

1 mA

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-45 Cel

Maximum RMS On-state Current:

25 A

Repetitive Peak Off-state Voltage:

400 V

Sub-Category:

TRIACs

Surface Mount:

NO

Trigger Device Type:

Trade Compliance

2N5274 Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-00-468-3092, 5961004683092

NIIN

004683092

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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