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DTB3

Onsemi

DTB3 by Onsemi

DTB3 by Onsemi is a TRIAC with 1.5V max on-state voltage, 30mA max DC gate trigger current, and 3A max RMS on-state current. It is commonly used in applications requiring precise AC power control such as dimmer switches and motor speed controllers due to its high repetitive peak off-state voltage of 600V.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 2,163 parts In-Stock

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Digiode

USA . 1,421 parts In-Stock

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Native Components

USA . 326 parts In-Stock

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$0.211

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$0.203

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Northwest PG Solutions

USA . 171 parts In-Stock

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$0.232

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$0.205

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$0.205

Kulean Microsystems

USA . 5,453 parts In-Stock

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SupplyDigital Components

Austria . 3,641 parts In-Stock

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Corphita

USA . 2,389 parts In-Stock

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TANS Electronics

Latvia . 985 parts In-Stock

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UHIMA Technologies

Türkiye . 413 parts In-Stock

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Corohmni

South Africa . 383 parts In-Stock

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Problanco Electronics

Mexico . 38 parts In-Stock

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Overview

Unleash the power of seamless control with the Onsemi DTB3, a top-tier Triode For Alternating Current (TRIAC) that guarantees precision and reliability. Crafted by industry-leading manufacturer Onsemi, this cutting-edge product offers unparalleled performance in a variety of applications. Say goodbye to limitations and welcome a world of possibilities with the DTB3, designed to deliver value, benefits, and advantages that exceed expectations. Elevate your projects with confidence and efficiency, thanks to the superior quality and advanced technology of the DTB3.

Feature Benefit Bullets

Maximum On-state Voltage: 1.5 V

Low on-state voltage ensures efficient operation and minimizes power loss, making this product energy efficient.

Maximum DC Gate Trigger Current: 30 mA

The high gate trigger current allows for reliable and consistent switching of the TRIAC, ensuring stable performance.

Trigger Device Type: TRIAC

Being a TRIAC, this product is suitable for AC power control applications, offering bidirectional control and versatility.

Maximum RMS On-state Current: 3 A

With a high on-state current rating, this TRIAC can handle heavy loads, making it suitable for a wide range of applications.

Maximum DC Gate Trigger Voltage: 2 V

The low gate trigger voltage ensures efficient switching of the TRIAC, reducing power consumption and heat generation.

Repetitive Peak Off-state Voltage: 600 V

The high off-state voltage rating provides ample protection against voltage spikes and ensures the durability and reliability of the product.

Technical Specifications

Triode For Alternating Current (TRIAC) DTB3 attributes and parameters. Explore more Triode For Alternating Current (TRIAC) devices from Onsemi

Specs

Maximum DC Gate Trigger Current:

30 mA

Maximum DC Gate Trigger Voltage:

2 V

Maximum On-state Voltage:

1.5 V

Maximum RMS On-state Current:

3 A

Repetitive Peak Off-state Voltage:

600 V

Sub-Category:

TRIACs

Surface Mount:

NO

Trigger Device Type:

Trade Compliance

DTB3 Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

2910-00-383-3038, 2910003833038

NIIN

003833038

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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