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MAC97-8

Onsemi

MAC97-8 by Onsemi

MAC97-8 by Onsemi is a TRIAC with 3 terminals, max. DC gate trigger current of 10mA, and max. RMS on-state current of 0.6A. It operates b/w -40 to 110 °C and has a repetitive peak off-state voltage of 600V. Ideal for applications requiring precise AC power control in various electronic devices.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Digiode

USA . 1,837 parts In-Stock

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ComSIT Distribution GmbH

Germany . 1,594 parts In-Stock

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Vyrian

USA . 699 parts In-Stock

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699

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Problanco Electronics

Mexico . 8,109 parts In-Stock

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Kulean Microsystems

USA . 7,533 parts In-Stock

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SupplyDigital Components

Austria . 4,197 parts In-Stock

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TANS Electronics

Latvia . 3,974 parts In-Stock

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Corphita

USA . 892 parts In-Stock

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UHIMA Technologies

Türkiye . 650 parts In-Stock

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650

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Corohmni

South Africa . 130 parts In-Stock

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Assy Fe

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Overview

Upgrade your electronics with the MAC97-8 by Onsemi, a top-quality TRIAC that delivers unmatched performance and reliability. Manufactured by industry leader Onsemi, this TRIAC is designed for a variety of applications, providing customers with exceptional value and benefits. With a maximum RMS On-state current of 0.6A and a trigger device type of 4 QUADRANT LOGIC LEVEL TRIAC, the MAC97-8 is the perfect choice for all your alternating current needs. Trust Onsemi to provide you with innovative solutions that exceed expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material makes the product lightweight and durable.

Maximum DC Gate Trigger Current: 10 mA

The high maximum DC gate trigger current ensures reliable operation and precise control of the TRIAC.

Configuration: SINGLE

The single configuration simplifies the wiring and installation process of the TRIAC.

Package Shape: ROUND

The round package shape allows for easy mounting and integration into various circuits and applications.

Terminal Form: THROUGH-HOLE

The through-hole terminal form provides secure connections and easy soldering onto circuit boards.

Maximum Leakage Current: 0.1 mA

The low maximum leakage current ensures minimal power loss and efficient operation of the TRIAC.

No. of Terminals: 3

The three terminals offer flexibility in connecting external circuits and components to the TRIAC.

Package Style (Meter): CYLINDRICAL

The cylindrical package style allows for compact and space-saving design implementations.

Maximum Operating Temperature: 110 °C

The high maximum operating temperature range ensures the TRIAC can perform reliably in various environmental conditions.

Trigger Device Type: 4 QUADRANT LOGIC LEVEL TRIAC

The 4 quadrant logic level TRIAC provides precise and efficient control over the switching operations of the device.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature allows for operation in cold environments without compromising performance.

Terminal Finish: Tin/Lead (Sn/Pb)

The tin/lead terminal finish enhances conductivity and solderability for stable and reliable connections.

Terminal Position: BOTTOM

The bottom terminal position facilitates easy mounting and connections in a circuit board layout.

Maximum RMS On-state Current: 0.6 A

The high maximum RMS on-state current enables the TRIAC to handle moderate to high power loads efficiently.

Maximum DC Gate Trigger Voltage: 2 V

The low maximum DC gate trigger voltage allows for smooth and accurate triggering of the TRIAC.

Repetitive Peak Off-state Voltage: 600 V

The high repetitive peak off-state voltage rating ensures reliable isolation and protection in high voltage applications.

Minimum Critical Rate of Rise of Off-state Voltage: 25 V/us

The high minimum critical rate of rise of off-state voltage allows for fast and efficient response to voltage changes.

Maximum Holding Current: 10 mA

The high maximum holding current ensures the TRIAC remains in the on-state during continuous operation, improving stability and reliability.

Technical Specifications

Triode For Alternating Current (TRIAC) MAC97-8 attributes and parameters. Explore more Triode For Alternating Current (TRIAC) devices from Onsemi

Specs

Additional Features:

SENSITIVE GATE

Configuration:

Minimum Critical Rate of Rise of Off-state Voltage:

25 V/us

Maximum DC Gate Trigger Current:

10 mA

Maximum DC Gate Trigger Voltage:

2 V

Maximum Holding Current:

10 mA

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

Maximum Leakage Current:

.1 mA

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

110 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

Qualification:

Not Qualified

Maximum RMS On-state Current:

.6 A

Repetitive Peak Off-state Voltage:

600 V

Sub-Category:

TRIACs

Surface Mount:

NO

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

THROUGH-HOLE

Terminal Position:

Trigger Device Type:

Trade Compliance

MAC97-8 Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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