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MAC97A4RLRPG

Onsemi

MAC97A4RLRPG by Onsemi

MAC97A4RLRPG by Onsemi is a 4 QUADRANT LOGIC LEVEL TRIAC with max DC Gate Trigger Current of 5mA, RMS On-state Current of 0.6A, and Repetitive Peak Off-state Voltage of 200V. Ideal for AC power control applications due to its high operating temperature range from -40 °C to 110°C.

Median Price

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Lifecycle Status

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1k+

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Vyrian

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Digiode

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TANS Electronics

Latvia . 3,077 parts In-Stock

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Problanco Electronics

Mexico . 3,061 parts In-Stock

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Kulean Microsystems

USA . 1,237 parts In-Stock

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SupplyDigital Components

Austria . 1,143 parts In-Stock

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UHIMA Technologies

Türkiye . 187 parts In-Stock

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Corohmni

South Africa . 153 parts In-Stock

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Corphita

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Overview

Unleash the power of the MAC97A4RLRPG by Onsemi, a top-of-the-line TRIAC that guarantees superior quality and reliability. Manufactured by Onsemi, a trusted name in the industry, this product is designed for a wide range of applications, providing seamless performance and efficiency. With a maximum DC Gate Trigger Current of 5 mA and a Repetitive Peak Off-state Voltage of 200 V, this TRIAC offers unmatched value and benefits to customers seeking a versatile and high-performing solution. Elevate your projects with the MAC97A4RLRPG and experience the difference it can make for your applications.

Feature Benefit Bullets

Maximum DC Gate Trigger Current: 5 mA

Low gate trigger current ensures efficient operation and reduced power consumption.

Maximum Leakage Current: 0.1 mA

Low leakage current minimizes power loss and improves the overall efficiency of the product.

Maximum Operating Temperature: 110 °C

Wide operating temperature range allows for reliable performance in varying environmental conditions.

Trigger Device Type: 4 QUADRANT LOGIC LEVEL TRIAC

4 quadrant logic level TRIAC provides precise control over switching operations.

Minimum Operating Temperature: -40 °C

Ability to operate at low temperatures makes this product suitable for a wide range of applications.

Maximum RMS On-state Current: 0.6 A

High RMS on-state current capability allows for handling of higher loads with ease.

Maximum DC Gate Trigger Voltage: 2 V

Low gate trigger voltage ensures reliable and consistent triggering of the device.

Repetitive Peak Off-state Voltage: 200 V

High repetitive peak off-state voltage provides adequate insulation and protection against voltage surges.

Maximum Holding Current: 10 mA

High holding current ensures the device remains in the on-state even in the presence of external disturbances.

Technical Specifications

Triode For Alternating Current (TRIAC) MAC97A4RLRPG attributes and parameters. Explore more Triode For Alternating Current (TRIAC) devices from Onsemi

Specs

Maximum DC Gate Trigger Current:

5 mA

Maximum DC Gate Trigger Voltage:

2 V

Maximum Holding Current:

10 mA

Maximum Leakage Current:

.1 mA

Maximum Operating Temperature:

110 Cel

Minimum Operating Temperature:

-40 Cel

Maximum RMS On-state Current:

.6 A

Repetitive Peak Off-state Voltage:

200 V

Sub-Category:

TRIACs

Surface Mount:

NO

Trigger Device Type:

Trade Compliance

MAC97A4RLRPG Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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