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MAC97-8RLRM

Onsemi

MAC97-8RLRM by Onsemi

MAC97-8RLRM by Onsemi is a TRIAC with 1.9V max on-state voltage, 0.6A max RMS current, and 600V repetitive peak off-state voltage. It operates b/w -40 to 110 °C and is ideal for AC power control applications due to its high gate trigger current of 10mA.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 2,315 parts In-Stock

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Digiode

USA . 2,077 parts In-Stock

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Kulean Microsystems

USA . 5,539 parts In-Stock

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SupplyDigital Components

Austria . 5,523 parts In-Stock

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Problanco Electronics

Mexico . 5,056 parts In-Stock

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TANS Electronics

Latvia . 2,233 parts In-Stock

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UHIMA Technologies

Türkiye . 377 parts In-Stock

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Corphita

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Corohmni

South Africa . 78 parts In-Stock

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Overview

Discover the MAC97-8RLRM by Onsemi, a top-quality TRIAC perfect for a wide range of applications. Manufactured by Onsemi, this TRIAC offers unparalleled reliability and performance. With a maximum on-state voltage of 1.9V and a repetitive peak off-state voltage of 600V, the MAC97-8RLRM is designed to excel in demanding environments. Whether you need it for lighting control, motor speed regulation, or heating control, this TRIAC delivers exceptional value and benefits to customers looking for efficiency and precision in their electronic devices. Choose the MAC97-8RLRM for superior quality and peace of mind.

Feature Benefit Bullets

Maximum On-state Voltage: 1.9 V

Low on-state voltage ensures efficient operation and minimizes power loss.

Maximum DC Gate Trigger Current: 10 mA

High gate trigger current allows for reliable switching of the TRIAC.

Maximum Leakage Current: 0.1 mA

Low leakage current leads to better performance and energy efficiency.

Maximum Operating Temperature: 110 °C

Wide operating temperature range makes this TRIAC suitable for various environments and applications.

Minimum Operating Temperature: -40 °C

Ability to operate at low temperatures ensures versatility and reliability in harsh conditions.

Terminal Finish: Tin/Lead (Sn/Pb)

Tin/lead finish provides good solderability and conductivity for easy installation.

Maximum RMS On-state Current: 0.6 A

High on-state current rating allows for handling of heavy loads with ease.

Maximum DC Gate Trigger Voltage: 2 V

Low gate trigger voltage ensures efficient and precise control of the TRIAC.

Repetitive Peak Off-state Voltage: 600 V

High off-state voltage rating makes this TRIAC suitable for high voltage applications.

Minimum Critical Rate of Rise of Off-state Voltage: 25 V/us

High rate of rise rating ensures quick response time and protection against voltage spikes.

Maximum Holding Current: 10 mA

High holding current ensures stable operation and prevents unintentional turn-off of the TRIAC.

Technical Specifications

Triode For Alternating Current (TRIAC) MAC97-8RLRM attributes and parameters. Explore more Triode For Alternating Current (TRIAC) devices from Onsemi

Specs

Minimum Critical Rate of Rise of Off-state Voltage:

25 V/us

Maximum DC Gate Trigger Current:

10 mA

Maximum DC Gate Trigger Voltage:

2 V

Maximum Holding Current:

10 mA

JESD-609 Code:

e0

Maximum Leakage Current:

.1 mA

Maximum On-state Voltage:

1.9 V

Maximum Operating Temperature:

110 Cel

Minimum Operating Temperature:

-40 Cel

Maximum RMS On-state Current:

.6 A

Repetitive Peak Off-state Voltage:

600 V

Sub-Category:

TRIACs

Surface Mount:

NO

Terminal Finish:

Tin/Lead (Sn/Pb)

Trigger Device Type:

Trade Compliance

MAC97-8RLRM Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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