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MAC97A4RLRFG

Onsemi

MAC97A4RLRFG by Onsemi

MAC97A4RLRFG by Onsemi is a 4 QUADRANT LOGIC LEVEL TRIAC with max DC Gate Trigger Current of 5mA, RMS On-state Current of 0.6A, and Repetitive Peak Off-state Voltage of 200V. Ideal for AC power control applications due to its high temp range (-40 to 110 °C) and low leakage current (0.1mA).

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 2,495 parts In-Stock

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Digiode

USA . 285 parts In-Stock

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Kulean Microsystems

USA . 6,689 parts In-Stock

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SupplyDigital Components

Austria . 5,301 parts In-Stock

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TANS Electronics

Latvia . 4,576 parts In-Stock

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Corphita

USA . 1,666 parts In-Stock

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UHIMA Technologies

Türkiye . 546 parts In-Stock

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Problanco Electronics

Mexico . 246 parts In-Stock

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Corohmni

South Africa . 80 parts In-Stock

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Overview

Discover the power of the MAC97A4RLRFG by Onsemi, a top-quality TRIAC device that offers unparalleled performance and reliability. Manufactured by Onsemi, a trusted name in the industry, this product is perfect for a wide range of applications. From dimmer switches to motor control, the MAC97A4RLRFG delivers outstanding results every time. With a maximum RMS on-state current of 0.6 A and a repetitive peak off-state voltage of 200 V, this TRIAC device ensures smooth operation and precise control. Trust Onsemi to provide you with the best quality components for your projects.

Feature Benefit Bullets

Maximum DC Gate Trigger Current: 5 mA

Having a high maximum DC gate trigger current allows for reliable and efficient triggering of the TRIAC, ensuring consistent performance.

Maximum Leakage Current: 0.1 mA

Low leakage current helps in reducing power loss and improving overall efficiency of the device.

Maximum Operating Temperature: 110 °C

With a high maximum operating temperature, this TRIAC can withstand elevated temperatures without compromising its performance and reliability.

Trigger Device Type: 4 QUADRANT LOGIC LEVEL TRIAC

This type of trigger device offers versatile use in various applications, providing flexibility and compatibility with different setups.

Minimum Operating Temperature: -40 °C

The wide range of operating temperatures allows for operation in extreme environments, making it suitable for a variety of applications.

Maximum RMS On-state Current: 0.6 A

The high maximum RMS on-state current capability ensures that this TRIAC can handle heavy loads without any issues, making it suitable for high-power applications.

Maximum DC Gate Trigger Voltage: 2 V

The low trigger voltage requirement makes this TRIAC easy to control and trigger, improving its user-friendliness and compatibility with control circuits.

Repetitive Peak Off-state Voltage: 200 V

The high repetitive peak off-state voltage rating ensures that the TRIAC can handle high voltage spikes and surges without compromising its longevity and reliability.

Maximum Holding Current: 10 mA

Having a high maximum holding current allows the TRIAC to maintain its on-state conduction even under varying load conditions, ensuring stability and consistent performance.

Technical Specifications

Triode For Alternating Current (TRIAC) MAC97A4RLRFG attributes and parameters. Explore more Triode For Alternating Current (TRIAC) devices from Onsemi

Specs

Maximum DC Gate Trigger Current:

5 mA

Maximum DC Gate Trigger Voltage:

2 V

Maximum Holding Current:

10 mA

Maximum Leakage Current:

.1 mA

Maximum Operating Temperature:

110 Cel

Minimum Operating Temperature:

-40 Cel

Maximum RMS On-state Current:

.6 A

Repetitive Peak Off-state Voltage:

200 V

Sub-Category:

TRIACs

Surface Mount:

NO

Trigger Device Type:

Trade Compliance

MAC97A4RLRFG Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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