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BT139B-600F,118

NXP Semiconductors

BT139B-600F,118 by NXP Semiconductors

BT139B-600F,118 by NXP Semiconductors is a TRIAC with 16A RMS on-state current and 600V repetitive peak off-state voltage. It has a max DC gate trigger current of 25mA and operates b/w -40 to 125°C. Ideal for applications requiring precise AC power control in various electronic devices.

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Anansix

USA . 2,212 parts In-Stock

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Digiode

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ACDS - Activité Composants Distribution Service

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Nova Conductors

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Aztec Data Supply Inc.

USA . 1,387 parts In-Stock

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Component Stockers USA

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AZTECH Wire

Italy . 262 parts In-Stock

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Ampacity Inc.

Singapore . 300 parts In-Stock

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One Stop Electronics

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UNI Independent Distributors

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Argo Parts USA

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QUARKTWIN TECHNOLOGY LTD

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Corphita

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Bastille Electronics

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Continental Prestige Electronics

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Perfect Parts

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Cyclops Electronics Ltd (Excess)

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Glotronic Ltd.

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Overview

Enhance your electrical designs with the BT139B-600F,118 by NXP Semiconductors. This TRIAC device offers reliable performance and durability, backed by the reputable manufacturer's commitment to quality. Ideal for a range of applications, this product provides value through its efficient operation and easy integration. Upgrade your projects with the BT139B-600F,118 and experience the benefits of superior technology at your fingertips.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material makes the product lightweight and durable.

Maximum DC Gate Trigger Current: 25 mA

The high gate trigger current allows for reliable switching of the TRIAC.

Configuration: SINGLE

The single configuration simplifies the design and installation process.

Surface Mount: YES

The surface mount capability makes it easy to integrate into compact electronics.

Maximum Repetitive Peak Off-state Leakage Current: 500 uA

Low off-state leakage current improves energy efficiency and safety of the product.

Maximum RMS On-state Current: 16 A

High RMS on-state current rating allows for handling of heavy loads.

Maximum Repetitive Peak Off-state Voltage: 600 V

The high off-state voltage rating allows for reliable performance in various applications.

Technical Specifications

Triode For Alternating Current (TRIAC) BT139B-600F,118 attributes and parameters. Explore more Triode For Alternating Current (TRIAC) devices from NXP Semiconductors

Specs

Case Connection:

Configuration:

Minimum Critical Rate of Rise of Off-state Voltage:

50 V/us

Maximum DC Gate Trigger Current:

25 mA

Maximum DC Gate Trigger Voltage:

1.5 V

Maximum Holding Current:

30 mA

JEDEC-95 Code:

TO-263AB

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Maximum Leakage Current:

.5 mA

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Qualification:

Not Qualified

Maximum RMS On-state Current:

16 A

Maximum Repetitive Peak Off-state Leakage Current:

500 uA

Repetitive Peak Off-state Voltage:

600 V

Sub-Category:

TRIACs

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

Trigger Device Type:

Trade Compliance

BT139B-600F,118 Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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