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DTM12N

Onsemi

DTM12N by Onsemi

DTM12N by Onsemi is a TRIAC with 1.5V max on-state voltage, 30mA max DC gate trigger current, and 12A max RMS on-state current. It is commonly used in AC power control applications due to its 600V repetitive peak off-state voltage and TRIAC trigger device type.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 1,672 parts In-Stock

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Digiode

USA . 1,501 parts In-Stock

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Native Components

USA . 944 parts In-Stock

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$21.012

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Northwest PG Solutions

USA . 1,235 parts In-Stock

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$23.113

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$20.802

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SupplyDigital Components

Austria . 7,041 parts In-Stock

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Kulean Microsystems

USA . 5,993 parts In-Stock

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TANS Electronics

Latvia . 1,418 parts In-Stock

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Corphita

USA . 1,200 parts In-Stock

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UHIMA Technologies

Türkiye . 821 parts In-Stock

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Corohmni

South Africa . 484 parts In-Stock

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Problanco Electronics

Mexico . 459 parts In-Stock

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Overview

Experience the superior quality and reliability of Onsemi's DTM12N TRIAC, a versatile component ideal for a wide range of AC power control applications. With a maximum RMS on-state current of 12A and repetitive peak off-state voltage of 600V, this TRIAC offers unmatched performance and durability. Whether you're looking to enhance the efficiency of your lighting systems or optimize motor control, the DTM12N provides the value, benefits, and advantages you need to take your projects to the next level. Trust Onsemi to deliver cutting-edge technology that exceeds expectations.

Feature Benefit Bullets

Maximum On-state Voltage: 1.5 V

Low on-state voltage ensures efficient conduction during operation, leading to lower power losses and improved performance.

Maximum DC Gate Trigger Current: 30 mA

High gate trigger current ensures reliable and quick switching of the TRIAC, making it suitable for various applications requiring precise control.

Trigger Device Type: TRIAC

TRIACs are specifically designed for AC applications, making them a suitable choice for alternating current control circuits.

Maximum RMS On-state Current: 12 A

High on-state current capability allows the TRIAC to handle larger loads, making it versatile for a wide range of applications.

Maximum DC Gate Trigger Voltage: 2 V

Low gate trigger voltage ensures compatibility with a wide range of control circuits and reduces the need for additional components for triggering.

Repetitive Peak Off-state Voltage: 600 V

High off-state voltage rating ensures safe operation and protection against voltage spikes or transients, making the TRIAC reliable in demanding environments.

Technical Specifications

Triode For Alternating Current (TRIAC) DTM12N attributes and parameters. Explore more Triode For Alternating Current (TRIAC) devices from Onsemi

Specs

Maximum DC Gate Trigger Current:

30 mA

Maximum DC Gate Trigger Voltage:

2 V

Maximum On-state Voltage:

1.5 V

Maximum RMS On-state Current:

12 A

Repetitive Peak Off-state Voltage:

600 V

Sub-Category:

TRIACs

Surface Mount:

NO

Trigger Device Type:

Trade Compliance

DTM12N Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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