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DTM12E-N

Onsemi

DTM12E-N by Onsemi

DTM12E-N by Onsemi is a TRIAC with 1.5V max on-state voltage, 30mA max DC gate trigger current, and 2mA max leakage current. Ideal for AC applications, it has a 12A max RMS on-state current and operates b/w -40 °C to 125°C temperature range.

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Digiode

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TANS Electronics

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Kulean Microsystems

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Problanco Electronics

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Northwest PG Solutions

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Native Components

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Corphita

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SupplyDigital Components

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Overview

Looking to optimize your AC power control solutions? Look no further than the DTM12E-N by Onsemi. As a leading manufacturer in the industry, Onsemi guarantees top-notch quality and reliability. The DTM12E-N falls under the Triode For Alternating Current (TRIAC) category, making it ideal for a wide range of applications. With a maximum RMS On-state current of 12A and a Repetitive Peak Off-state Voltage of 400V, this TRIAC offers exceptional performance. Trust in Onsemi to deliver the value, benefits, and advantages you need to take your projects to the next level.

Feature Benefit Bullets

Maximum On-state Voltage: 1.5 V

Low on-state voltage helps in reducing power consumption and heat dissipation, making the product energy-efficient.

Maximum DC Gate Trigger Current: 30 mA

A low gate trigger current ensures efficient triggering of the TRIAC, leading to better performance and reliability.

Maximum Leakage Current: 2 mA

Low leakage current results in minimal power loss when the device is in the off-state, increasing overall efficiency.

Maximum Operating Temperature: 125 °C

High operating temperature range allows the TRIAC to function reliably in a variety of environments.

Trigger Device Type: TRIAC

Being a TRIAC, this device can conduct current in both directions, making it suitable for AC applications.

Maximum RMS On-state Current: 12 A

High on-state current rating indicates the capability of handling high loads, making it versatile for different applications.

Maximum DC Gate Trigger Voltage: 2 V

Low trigger voltage ensures efficient switching of the TRIAC, minimizing power losses.

Repetitive Peak Off-state Voltage: 400 V

High off-state voltage rating provides better insulation and safety margins in high voltage applications.

Minimum Critical Rate of Rise of Commutation Voltage: 10 V/us

A high rate of rise of commutation voltage ensures fast and reliable switching of the TRIAC, reducing chances of failure.

Maximum Holding Current: 50 mA

Higher holding current ensures the TRIAC remains in the on-state even when the gate signal is removed, enhancing reliability.

Technical Specifications

Triode For Alternating Current (TRIAC) DTM12E-N attributes and parameters. Explore more Triode For Alternating Current (TRIAC) devices from Onsemi

Specs

Minimum Critical Rate of Rise of Commutation Voltage:

10 V/us

Maximum DC Gate Trigger Current:

30 mA

Maximum DC Gate Trigger Voltage:

2 V

Maximum Holding Current:

50 mA

Maximum Leakage Current:

2 mA

Maximum On-state Voltage:

1.5 V

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Maximum RMS On-state Current:

12 A

Repetitive Peak Off-state Voltage:

400 V

Sub-Category:

TRIACs

Surface Mount:

NO

Trigger Device Type:

Trade Compliance

DTM12E-N Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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