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DTB10G

Onsemi

DTB10G by Onsemi

The Onsemi DTB10G is a TRIAC with 1.3V max on-state voltage, 50mA max DC gate trigger current, and 2mA max leakage current. It operates at up to 125 °C and has a repetitive peak off-state voltage of 600V. Ideal for AC power control applications requiring up to 10A RMS on-state current.

Median Price

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Lifecycle Status

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2

In-Stock Inventory

1k+

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Digiode

USA . 879 parts In-Stock

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Vyrian

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Native Components

USA . 676 parts In-Stock

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$0.248

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$0.238

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Northwest PG Solutions

USA . 23 parts In-Stock

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$0.273

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Problanco Electronics

Mexico . 4,568 parts In-Stock

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TANS Electronics

Latvia . 3,067 parts In-Stock

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Kulean Microsystems

USA . 1,031 parts In-Stock

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Corphita

USA . 1,002 parts In-Stock

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SupplyDigital Components

Austria . 705 parts In-Stock

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UHIMA Technologies

Türkiye . 526 parts In-Stock

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Corohmni

South Africa . 412 parts In-Stock

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Overview

Experience the power and reliability of the DTB10G by Onsemi, a leader in semiconductor manufacturing. This TRIAC device offers seamless control over alternating current, making it perfect for a wide range of applications. From lighting control to motor speed regulation, this product delivers superior performance and efficiency. Trust Onsemi's reputation for quality and innovation, and elevate your projects with the DTB10G.

Feature Benefit Bullets

Maximum On-state Voltage: 1.3 V

Low on-state voltage helps reduce power consumption and heat generation, making this product energy efficient.

Maximum DC Gate Trigger Current: 50 mA

Higher gate trigger current ensures reliable switching performance, making this product suitable for various applications.

Maximum Leakage Current: 2 mA

Low leakage current helps in maintaining stability and efficiency of the product, especially during standby mode.

Maximum Operating Temperature: 125 °C

High operating temperature rating allows the product to withstand rigorous conditions, making it reliable in industrial environments.

Trigger Device Type: TRIAC

TRIAC trigger device type offers bidirectional control of current flow, making this product suitable for AC switching applications.

Maximum RMS On-state Current: 10 A

High on-state current capability allows the product to handle large loads, making it versatile for a range of applications.

Maximum DC Gate Trigger Voltage: 2 V

Low gate trigger voltage ensures efficient triggering and control, enhancing the reliability and performance of the product.

Repetitive Peak Off-state Voltage: 600 V

High off-state voltage rating ensures safe operation and protection against voltage fluctuations, making this product ideal for AC power control.

Technical Specifications

Triode For Alternating Current (TRIAC) DTB10G attributes and parameters. Explore more Triode For Alternating Current (TRIAC) devices from Onsemi

Specs

Maximum DC Gate Trigger Current:

50 mA

Maximum DC Gate Trigger Voltage:

2 V

Maximum Leakage Current:

2 mA

Maximum On-state Voltage:

1.3 V

Maximum Operating Temperature:

125 Cel

Maximum RMS On-state Current:

10 A

Repetitive Peak Off-state Voltage:

600 V

Sub-Category:

TRIACs

Surface Mount:

NO

Trigger Device Type:

Trade Compliance

DTB10G Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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