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TIC263D

Texas Instruments

TIC263D by Texas Instruments

TIC263D by Texas Instruments is a TRIAC with 25A RMS current, 400V repetitive peak off-state voltage, and 50mA max holding current. It operates b/w -40 to 110°C and has a trigger voltage of 2.5V. Ideal for AC power control applications requiring high current handling capabilities in industrial settings.

Median Price

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Lifecycle Status

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9

In-Stock Inventory

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Vyrian

USA . 6,117 parts In-Stock

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Digiode

USA . 1,964 parts In-Stock

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Manotoh

Italy . 69 parts In-Stock

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Halfin

Belgium . 35 parts In-Stock

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Huijzer Components

Netherlands . 32 parts In-Stock

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Specialty Parts & Electronic Components, Inc. (S.P.E.C.)

USA . 20 parts In-Stock

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Digital Electronic Gebert Verwaltungs UG

Germany . 9 parts In-Stock

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LittleDiode

UK . 7 parts In-Stock

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Fibra_Brandt Electronic GMBH

Germany . 2 parts In-Stock

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One Stop Electronics

USA . 455 parts In-Stock

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$0.100

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Parana Technologies

USA . 1,420 parts In-Stock

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$4.144

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$384.818

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$3.729

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DigiPath Technology Company

USA . 1,759 parts In-Stock

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ChromeModa Solutions

Germany . 4,055 parts In-Stock

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IDEA Electronic Components Group

UK . 1,895 parts In-Stock

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AZTECH Wire

Italy . 430 parts In-Stock

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Corphita

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Overview

Unlock the power of your electronics with the TIC263D by Texas Instruments. As a leading manufacturer in the industry, Texas Instruments guarantees top-notch quality and reliability. The TIC263D falls into the Triode For Alternating Current (TRIAC) category, offering endless possibilities for applications. With a maximum RMS On-state Current of 25 A and a Repetitive Peak Off-state Voltage of 400 V, this product delivers exceptional performance. Trust in Texas Instruments to provide you with the tools you need to bring your projects to life.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the product lightweight and durable, ensuring a longer lifespan.

Maximum DC Gate Trigger Current: 50 mA

The high maximum DC gate trigger current allows for efficient and reliable triggering of the TRIAC, making it suitable for a variety of applications.

Configuration: SINGLE

The single configuration simplifies the setup and installation process, making it user-friendly and easy to integrate into existing systems.

Package Shape: RECTANGULAR

The rectangular package shape provides a compact and space-saving design, ideal for applications where space is limited.

Terminal Form: THROUGH-HOLE

The through-hole terminal form ensures secure connections and easy soldering, making it convenient for assembly and maintenance.

Maximum Leakage Current: 2 mA

The low maximum leakage current helps in reducing energy wastage and improves the overall efficiency of the product.

No. of Terminals: 3

Having 3 terminals provides compatibility with a wide range of circuit configurations, increasing the versatility of the product.

Package Style (Meter): FLANGE MOUNT

The flange mount package style allows for easy and secure mounting, ensuring stability and reliability in various applications.

Maximum Operating Temperature: 110 °C

With a high maximum operating temperature of 110°C, the product can withstand elevated temperatures, making it suitable for demanding environments.

Trigger Device Type: 4 QUADRANT LOGIC LEVEL TRIAC

The 4 quadrant logic level TRIAC provides precise control over the switching operation, allowing for accurate and efficient performance in both AC and DC circuits.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature of -40°C ensures the product can operate in cold environments without any performance issues.

Terminal Position: SINGLE

The single terminal position simplifies the wiring process and ensures proper connections, reducing the chances of errors during installation.

Maximum RMS On-state Current: 25 A

The high maximum RMS on-state current rating of 25A allows the product to handle high current loads with ease, making it suitable for heavy-duty applications.

Maximum DC Gate Trigger Voltage: 2.5 V

The low maximum DC gate trigger voltage of 2.5V ensures efficient triggering at lower voltage levels, reducing power consumption and improving overall performance.

Case Connection: MAIN TERMINAL 2

The case connection to main terminal 2 provides a reliable and secure connection, ensuring stable operation and reducing the risk of malfunctions.

Repetitive Peak Off-state Voltage: 400 V

The high repetitive peak off-state voltage of 400V allows the product to handle high voltage applications safely, making it suitable for a wide range of voltage levels.

Maximum Holding Current: 50 mA

The high maximum holding current ensures the TRIAC remains in the on-state even after the gate trigger current is removed, providing reliable operation in various conditions.

Technical Specifications

Triode For Alternating Current (TRIAC) TIC263D attributes and parameters. Explore more Triode For Alternating Current (TRIAC) devices from Texas Instruments

Specs

Case Connection:

Configuration:

Maximum DC Gate Trigger Current:

50 mA

Maximum DC Gate Trigger Voltage:

2.5 V

Maximum Holding Current:

50 mA

JESD-30 Code:

R-PSFM-T3

Maximum Leakage Current:

2 mA

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

110 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Peak Reflow Temperature (C):

NOT SPECIFIED

Qualification:

Not Qualified

Maximum RMS On-state Current:

25 A

Repetitive Peak Off-state Voltage:

400 V

Sub-Category:

TRIACs

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trigger Device Type:

Trade Compliance

TIC263D Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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