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TIC206S

Texas Instruments

TIC206S by Texas Instruments

TIC206S by Texas Instruments is a TRIAC with 800V repetitive peak off-state voltage, 3A max RMS on-state current, and 5mA max DC gate trigger current. It operates b/w -40°C to 125°C, making it ideal for AC power control applications.

Median Price

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Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

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Vyrian

USA . 6,168 parts In-Stock

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Specialty Parts & Electronic Components, Inc. (S.P.E.C.)

USA . 2,390 parts In-Stock

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Digiode

USA . 97 parts In-Stock

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PUI

USA . 42 parts In-Stock

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LittleDiode

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Parana Technologies

USA . 1,931 parts In-Stock

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$2.608

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$3.097

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DigiPath Technology Company

USA . 1,095 parts In-Stock

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$2.871

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ChromeModa Solutions

Germany . 4,054 parts In-Stock

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$2.930

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$2.403

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IDEA Electronic Components Group

UK . 905 parts In-Stock

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$2.637

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AZTECH Wire

Italy . 892 parts In-Stock

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$13.204

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One Stop Electronics

USA . 1,373 parts In-Stock

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Kepictronics

USA . 15,000 parts In-Stock

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Corphita

USA . 2,636 parts In-Stock

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Assy Fe

Spain . 615 parts In-Stock

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Overview

Unleash the power of innovation with the TIC206S by Texas Instruments, a cutting-edge TRIAC that promises unrivaled quality and reliability. Designed by a renowned manufacturer, this device is perfect for a wide range of applications, from dimmer switches to motor speed control. Experience seamless performance and superior efficiency with this TRIAC, offering customers unmatched value and benefits. Upgrade your electronics today with the TIC206S and elevate your projects to new heights of success.

Feature Benefit Bullets

Maximum DC Gate Trigger Current: 5 mA

The low trigger current requirement makes this TRIAC easy to control and compatible with a wide range of control systems.

Maximum Leakage Current: 1 mA

The low leakage current ensures minimal power loss when the TRIAC is in the off-state, leading to better efficiency.

Maximum Operating Temperature: 125 °C

With a high operating temperature range, this TRIAC can withstand harsh environmental conditions and high-temperature applications.

Trigger Device Type: TRIAC

Being a TRIAC, this device is suitable for controlling AC power with both positive and negative cycles, making it versatile for various applications.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature allows this TRIAC to function effectively in cold environments without compromising performance.

Maximum RMS On-state Current: 3 A

The high on-state current rating enables this TRIAC to handle heavy loads with ease, making it suitable for high-power applications.

Maximum DC Gate Trigger Voltage: 2 V

The low gate trigger voltage requirement ensures that the TRIAC can be easily controlled with low-power signals, enhancing its efficiency.

Repetitive Peak Off-state Voltage: 800 V

The high off-state voltage rating allows this TRIAC to withstand voltage spikes and high voltages, ensuring durability and reliability.

Maximum Holding Current: 30 mA

The high holding current ensures that the TRIAC remains in the on-state even in the presence of fluctuations, providing stable performance.

Technical Specifications

Triode For Alternating Current (TRIAC) TIC206S attributes and parameters. Explore more Triode For Alternating Current (TRIAC) devices from Texas Instruments

Specs

Maximum DC Gate Trigger Current:

5 mA

Maximum DC Gate Trigger Voltage:

2 V

Maximum Holding Current:

30 mA

Maximum Leakage Current:

1 mA

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Peak Reflow Temperature (C):

NOT SPECIFIED

Maximum RMS On-state Current:

3 A

Repetitive Peak Off-state Voltage:

800 V

Sub-Category:

TRIACs

Surface Mount:

NO

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trigger Device Type:

Trade Compliance

TIC206S Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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