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SYAL334

Onsemi

SYAL334 by Onsemi

SYAL334 by Onsemi is a TRIAC with 1.8V max on-state voltage, 40mA max DC gate trigger current, and 700V repetitive peak off-state voltage. It is used as a trigger device in AC applications due to its high holding current of 50000mA and fast commutation voltage rate of 5V/us.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 1,408 parts In-Stock

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Digiode

USA . 1,162 parts In-Stock

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Problanco Electronics

Mexico . 6,410 parts In-Stock

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SupplyDigital Components

Austria . 4,770 parts In-Stock

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Corphita

USA . 2,237 parts In-Stock

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TANS Electronics

Latvia . 2,054 parts In-Stock

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Kulean Microsystems

USA . 1,055 parts In-Stock

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UHIMA Technologies

Türkiye . 502 parts In-Stock

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Corohmni

South Africa . 278 parts In-Stock

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Overview

Enhance your electrical projects with the SYAL334 by Onsemi, a top-quality TRIAC that promises reliable performance and durability. This innovative product from a trusted manufacturer offers a wide range of applications in lighting control, motor speed control, and temperature regulation. Experience seamless functionality and efficiency with the SYAL334, providing customers with unmatched value and benefits for their electronic needs. Elevate your projects to the next level with this cutting-edge TRIAC that delivers superior performance and versatility.

Feature Benefit Bullets

Maximum On-state Voltage: 1.8 V

Low on-state voltage ensures efficient operation and reduces power losses.

Maximum DC Gate Trigger Current: 40 mA

Low gate trigger current allows for easily controllable switching of the TRIAC.

Maximum Leakage Current: 1 mA

Low leakage current contributes to improved reliability of the product.

Trigger Device Type: TRIAC

TRIAC technology offers bidirectional control of current flow, making it suitable for AC applications.

Terminal Finish: Tin/Lead (Sn/Pb)

The tin/lead terminal finish provides good solderability and ensures robust connections.

Repetitive Peak Off-state Voltage: 700 V

High off-state voltage rating allows the TRIAC to be used in high voltage applications.

Minimum Critical Rate of Rise of Commutation Voltage: 5 V/us

Fast commutation voltage rate ensures quick and reliable switching of the TRIAC.

Maximum Holding Current: 50000 mA

High holding current capability allows the TRIAC to maintain conduction without requiring continuous gate current.

Technical Specifications

Triode For Alternating Current (TRIAC) SYAL334 attributes and parameters. Explore more Triode For Alternating Current (TRIAC) devices from Onsemi

Specs

Minimum Critical Rate of Rise of Commutation Voltage:

5 V/us

Maximum DC Gate Trigger Current:

40 mA

Maximum Holding Current:

50000 mA

JESD-609 Code:

e0

Maximum Leakage Current:

1 mA

Maximum On-state Voltage:

1.8 V

Repetitive Peak Off-state Voltage:

700 V

Sub-Category:

TRIACs

Surface Mount:

NO

Terminal Finish:

Tin/Lead (Sn/Pb)

Trigger Device Type:

Trade Compliance

SYAL334 Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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