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SYAL114

Onsemi

SYAL114 by Onsemi

SYAL114 by Onsemi is a TRIAC with 1.8V max on-state voltage, 40mA max DC gate trigger current, and 1mA max leakage current. It is used as a trigger device in applications requiring up to 200V repetitive peak off-state voltage and 5 V/us min critical rate of rise of commutation voltage.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 1,349 parts In-Stock

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Digiode

USA . 580 parts In-Stock

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580

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SupplyDigital Components

Austria . 8,070 parts In-Stock

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Kulean Microsystems

USA . 4,920 parts In-Stock

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TANS Electronics

Latvia . 3,793 parts In-Stock

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Problanco Electronics

Mexico . 1,301 parts In-Stock

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Corphita

USA . 1,280 parts In-Stock

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UHIMA Technologies

Türkiye . 624 parts In-Stock

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Corohmni

South Africa . 496 parts In-Stock

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Overview

Upgrade your electronics with the SYAL114 by Onsemi, a top-of-the-line TRIAC device designed to deliver superior performance and reliability. Manufactured by Onsemi, a trusted leader in semiconductor technology, this TRIAC offers advanced features and benefits for a wide range of applications. Whether you're looking to enhance lighting controls, motor speed control, or power switching systems, the SYAL114 provides unmatched value and efficiency. Trust in Onsemi to provide you with the quality and innovation your project deserves.

Feature Benefit Bullets

Maximum On-state Voltage: 1.8 V

Low maximum on-state voltage ensures efficient operation and minimal power loss, making this product energy efficient.

Maximum DC Gate Trigger Current: 40 mA

High maximum DC gate trigger current allows for reliable and consistent switching of the TRIAC, ensuring stable performance.

Maximum Leakage Current: 1 mA

Low maximum leakage current indicates minimal wasted power and improved safety in the circuit.

Trigger Device Type: TRIAC

Being a TRIAC, this product is suitable for AC switching applications, providing versatility in use.

Terminal Finish: Tin/Lead (Sn/Pb)

Tin/Lead terminal finish offers good solderability and durability, ensuring secure connections in the circuit.

Repetitive Peak Off-state Voltage: 200 V

High repetitive peak off-state voltage allows for handling of higher voltage applications, making this product versatile in various scenarios.

Minimum Critical Rate of Rise of Commutation Voltage: 5 V/us

Minimum critical rate of rise of commutation voltage of 5 V/us ensures quick and efficient switching transitions, reducing the risk of voltage spikes.

Maximum Holding Current: 50000 mA

High maximum holding current allows the TRIAC to stay latched and conduct current even after the gate trigger signal is removed, ensuring stable operation.

Technical Specifications

Triode For Alternating Current (TRIAC) SYAL114 attributes and parameters. Explore more Triode For Alternating Current (TRIAC) devices from Onsemi

Specs

Minimum Critical Rate of Rise of Commutation Voltage:

5 V/us

Maximum DC Gate Trigger Current:

40 mA

Maximum Holding Current:

50000 mA

JESD-609 Code:

e0

Maximum Leakage Current:

1 mA

Maximum On-state Voltage:

1.8 V

Repetitive Peak Off-state Voltage:

200 V

Sub-Category:

TRIACs

Surface Mount:

NO

Terminal Finish:

Tin/Lead (Sn/Pb)

Trigger Device Type:

Trade Compliance

SYAL114 Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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