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TIC216C

Texas Instruments

TIC216C by Texas Instruments

TIC216C by Texas Instruments is a TRIAC with 5mA DC Gate Trigger Current, 2mA Leakage Current, and 6A RMS On-state Current. It operates b/w -40 to 110°C, making it suitable for AC power control applications requiring precise triggering and low leakage current.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 8,989 parts In-Stock

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Digiode

USA . 3,169 parts In-Stock

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3,169

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Distributors (Availability)

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Semicontronic

India . 817 parts In-Stock

1+ parts

$1.100

100+ parts

$1.072

1k+ parts

$1.067

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-

817

$1.100

$1.072

$1.067

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Parana Technologies

USA . 1,421 parts In-Stock

1+ parts

$4.285

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$4.714

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$4.285

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$4.714

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DigiPath Technology Company

USA . 104 parts In-Stock

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$4.719

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104

$4.719

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IDEA Electronic Components Group

UK . 1,994 parts In-Stock

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$4.815

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$4.334

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1,994

$4.815

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$4.334

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ChromeModa Solutions

Germany . 537 parts In-Stock

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$4.815

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$3.948

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537

$4.815

$3.948

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Ampacity Inc.

Singapore . 665 parts In-Stock

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$8.100

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665

$8.100

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AZTECH Wire

Italy . 812 parts In-Stock

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$9.394

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$9.394

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One Stop Electronics

USA . 1,256 parts In-Stock

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$12.100

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$12.100

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Corphita

USA . 1,329 parts In-Stock

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Corohmni

South Africa . 284 parts In-Stock

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Overview

Unleash the power of seamless control with the TIC216C by Texas Instruments. As a leader in semiconductor manufacturing, Texas Instruments delivers unparalleled quality and reliability. The TIC216C falls under the category of Triode For Alternating Current (TRIAC), making it a versatile choice for a wide range of applications. With a maximum RMS On-state current of 6A and a repetitive peak off-state voltage of 300V, this TRIAC offers superior performance and efficiency. Experience the value and benefits of precise control with the TIC216C, designed to exceed your expectations.

Feature Benefit Bullets

Maximum DC Gate Trigger Current: 5 mA

Low trigger current requirement allows for efficient and reliable activation of the TRIAC, ensuring smooth and accurate operation.

Maximum Leakage Current: 2 mA

Low leakage current helps in reducing power losses and enhances the overall efficiency of the product.

Maximum Operating Temperature: 110 °C

High operating temperature range ensures that the TRIAC can function optimally even in challenging environments without the risk of overheating.

Trigger Device Type: TRIAC

Being a TRIAC, this product allows for bidirectional control of alternating current, making it suitable for various applications where precise AC power control is required.

Minimum Operating Temperature: -40 °C

Wide temperature range allows for reliable operation in extreme cold conditions, expanding the range of potential applications for this product.

Maximum RMS On-state Current: 6 A

High current handling capability enables the TRIAC to safely and effectively control substantial amounts of current, making it suitable for high-power applications.

Maximum DC Gate Trigger Voltage: 2.2 V

Low gate trigger voltage minimizes power consumption and facilitates easy interfacing with control circuits, improving overall efficiency.

Repetitive Peak Off-state Voltage: 300 V

High off-state voltage rating ensures reliable isolation and protection against voltage spikes, enhancing the durability and safety of the product.

Minimum Critical Rate of Rise of Commutation Voltage: 5 V/us

Fast rate of rise of commutation voltage provides efficient switching performance, reducing electromagnetic interference and enhancing overall reliability.

Maximum Holding Current: 30 mA

High holding current ensures stable operation by preventing unintentional turn-off of the TRIAC, enhancing the reliability of the product.

Technical Specifications

Triode For Alternating Current (TRIAC) TIC216C attributes and parameters. Explore more Triode For Alternating Current (TRIAC) devices from Texas Instruments

Specs

Minimum Critical Rate of Rise of Commutation Voltage:

5 V/us

Maximum DC Gate Trigger Current:

5 mA

Maximum DC Gate Trigger Voltage:

2.2 V

Maximum Holding Current:

30 mA

Maximum Leakage Current:

2 mA

Maximum Operating Temperature:

110 Cel

Minimum Operating Temperature:

-40 Cel

Peak Reflow Temperature (C):

NOT SPECIFIED

Maximum RMS On-state Current:

6 A

Repetitive Peak Off-state Voltage:

300 V

Sub-Category:

TRIACs

Surface Mount:

NO

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trigger Device Type:

Trade Compliance

TIC216C Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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