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DTM12G-N

Onsemi

DTM12G-N by Onsemi

DTM12G-N by Onsemi is a TRIAC with 1.5V max on-state voltage, 30mA max DC gate trigger current, and 2mA max leakage current. It operates b/w -40 °C to 125°C, ideal for AC power control applications requiring up to 12A RMS on-state current and 600V repetitive peak off-state voltage.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 1,748 parts In-Stock

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Digiode

USA . 1,372 parts In-Stock

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Native Components

USA . 256 parts In-Stock

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$1.027

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Northwest PG Solutions

USA . 1,841 parts In-Stock

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Problanco Electronics

Mexico . 4,832 parts In-Stock

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TANS Electronics

Latvia . 2,431 parts In-Stock

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Corphita

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UHIMA Technologies

Türkiye . 962 parts In-Stock

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Kulean Microsystems

USA . 718 parts In-Stock

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Corohmni

South Africa . 323 parts In-Stock

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SupplyDigital Components

Austria . 88 parts In-Stock

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Overview

Unlock the power of precision and reliability with the DTM12G-N by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-quality Triode For Alternating Current (TRIAC) components that guarantee superior performance and durability. Whether you're looking to enhance your lighting systems, motor controls, or heating equipment, the DTM12G-N offers unmatched value, efficiency, and peace of mind. Experience seamless operation and improved functionality with this versatile TRIAC device, backed by Onsemi's reputation for excellence. Elevate your projects with the DTM12G-N today.

Feature Benefit Bullets

Maximum On-state Voltage: 1.5 V

The low on-state voltage ensures efficient and low power operation of the TRIAC, making it a good choice for applications where minimal power consumption is desired.

Maximum DC Gate Trigger Current: 30 mA

The high gate trigger current allows for reliable and responsive switching of the TRIAC, making it suitable for applications where precise control is needed.

Maximum Leakage Current: 2 mA

The low leakage current ensures minimal power wastage and improved overall efficiency of the TRIAC, making it a reliable choice for various applications.

Maximum Operating Temperature: 125 °C

The high operating temperature range allows the TRIAC to function effectively in harsh environments, making it suitable for industrial and automotive applications.

Minimum Operating Temperature: -40 °C

The wide operating temperature range ensures the TRIAC can operate in both extremely cold and hot conditions, making it versatile for use in various environments.

Maximum RMS On-state Current: 12 A

The high RMS on-state current rating allows the TRIAC to handle heavy loads and high current applications effectively, making it a reliable choice for demanding environments.

Maximum DC Gate Trigger Voltage: 2 V

The low gate trigger voltage ensures efficient and reliable switching of the TRIAC, making it suitable for applications requiring fast response times.

Repetitive Peak Off-state Voltage: 600 V

The high off-state voltage rating allows the TRIAC to withstand high voltage spikes, making it suitable for use in power distribution systems and high- voltage applications.

Minimum Critical Rate of Rise of Commutation Voltage: 10 V/us

The minimum critical rate of rise of commutation voltage ensures stable and controlled switching of the TRIAC, making it suitable for applications where precise voltage regulation is required.

Maximum Holding Current: 50 mA

The high holding current rating ensures that the TRIAC remains in the on-state without requiring continuous gate current, making it suitable for applications requiring prolonged on-state operation.

Technical Specifications

Triode For Alternating Current (TRIAC) DTM12G-N attributes and parameters. Explore more Triode For Alternating Current (TRIAC) devices from Onsemi

Specs

Minimum Critical Rate of Rise of Commutation Voltage:

10 V/us

Maximum DC Gate Trigger Current:

30 mA

Maximum DC Gate Trigger Voltage:

2 V

Maximum Holding Current:

50 mA

Maximum Leakage Current:

2 mA

Maximum On-state Voltage:

1.5 V

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Maximum RMS On-state Current:

12 A

Repetitive Peak Off-state Voltage:

600 V

Sub-Category:

TRIACs

Surface Mount:

NO

Trigger Device Type:

Trade Compliance

DTM12G-N Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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