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DTM12C-N

Onsemi

DTM12C-N by Onsemi

DTM12C-N by Onsemi is a TRIAC with 1.5V max on-state voltage, 30mA max DC gate trigger current, and 2mA max leakage current. It operates b/w -40 °C to 125°C, ideal for AC power control applications requiring up to 12A RMS on-state current and 200V repetitive peak off-state voltage.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 1,527 parts In-Stock

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Vyrian

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TANS Electronics

Latvia . 5,075 parts In-Stock

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Kulean Microsystems

USA . 3,414 parts In-Stock

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Problanco Electronics

Mexico . 3,263 parts In-Stock

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SupplyDigital Components

Austria . 1,562 parts In-Stock

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Corphita

USA . 1,176 parts In-Stock

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Corohmni

South Africa . 486 parts In-Stock

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UHIMA Technologies

Türkiye . 363 parts In-Stock

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Native Components

USA . 291 parts In-Stock

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Northwest PG Solutions

USA . 163 parts In-Stock

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Overview

Unlock seamless control and efficiency with the DTM12C-N by Onsemi. Manufactured by a trusted brand known for quality and innovation, this Triode For Alternating Current (TRIAC) offers reliable performance in a variety of applications. From lighting control to motor speed regulation, this product delivers unparalleled value with its high on-state current, low gate trigger voltage, and wide operating temperature range. Experience the benefits of precision engineering and cutting-edge technology with the DTM12C-N by Onsemi.

Feature Benefit Bullets

Maximum On-state Voltage: 1.5 V

Low on-state voltage results in less power dissipation and improves efficiency.

Maximum DC Gate Trigger Current: 30 mA

Allows for easy triggering of the TRIAC.

Maximum Leakage Current: 2 mA

Low leakage current helps in preventing unintended operation and improves reliability.

Maximum Operating Temperature: 125 °C

High operating temperature range provides versatility in different environments.

Trigger Device Type: TRIAC

TRIAC trigger device type offers reliable and precise switching capabilities.

Minimum Operating Temperature: -40 °C

Wide range of operating temperatures allows for usage in extreme conditions.

Maximum RMS On-state Current: 12 A

High on-state current handling capability makes it suitable for various applications.

Maximum DC Gate Trigger Voltage: 2 V

Low gate trigger voltage ensures easy control and operation of the TRIAC.

Repetitive Peak Off-state Voltage: 200 V

High off-state voltage ensures robust performance and protection against voltage spikes.

Minimum Critical Rate of Rise of Commutation Voltage: 10 V/us

Fast rate of rise of commutation voltage allows for efficient switching and smooth operation.

Maximum Holding Current: 50 mA

High holding current helps in maintaining the state of the TRIAC during operation.

Technical Specifications

Triode For Alternating Current (TRIAC) DTM12C-N attributes and parameters. Explore more Triode For Alternating Current (TRIAC) devices from Onsemi

Specs

Minimum Critical Rate of Rise of Commutation Voltage:

10 V/us

Maximum DC Gate Trigger Current:

30 mA

Maximum DC Gate Trigger Voltage:

2 V

Maximum Holding Current:

50 mA

Maximum Leakage Current:

2 mA

Maximum On-state Voltage:

1.5 V

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Maximum RMS On-state Current:

12 A

Repetitive Peak Off-state Voltage:

200 V

Sub-Category:

TRIACs

Surface Mount:

NO

Trigger Device Type:

Trade Compliance

DTM12C-N Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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