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BTA12-600C4G

Onsemi

BTA12-600C4G by Onsemi

BTA12-600C4G by Onsemi is a 4 QUADRANT LOGIC LEVEL TRIAC with a max RMS On-state Current of 12A and Repetitive Peak Off-state Voltage of 600V. It is used in applications requiring AC power control, such as dimmer switches and motor speed control due to its high Max Operating Temperature of 125 °C.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 2,236 parts In-Stock

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Digiode

USA . 902 parts In-Stock

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Problanco Electronics

Mexico . 7,498 parts In-Stock

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SupplyDigital Components

Austria . 6,967 parts In-Stock

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TANS Electronics

Latvia . 4,821 parts In-Stock

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Kulean Microsystems

USA . 2,966 parts In-Stock

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Corphita

USA . 2,332 parts In-Stock

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Northwest PG Solutions

USA . 1,281 parts In-Stock

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Native Components

USA . 575 parts In-Stock

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UHIMA Technologies

Türkiye . 144 parts In-Stock

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Corohmni

South Africa . 111 parts In-Stock

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Overview

Discover the power of the BTA12-600C4G by Onsemi, a top-of-the-line TRIAC that guarantees reliability and performance. With Onsemi's reputation for quality and innovation, this product is designed to excel in a variety of applications. From lighting control to motor speed regulation, the BTA12-600C4G offers unmatched value and benefits to customers. Trust in the superior design and efficiency of this TRIAC to take your projects to the next level. Elevate your work with the BTA12-600C4G today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material makes the package lightweight and durable, ensuring the overall reliability and longevity of the product.

Maximum DC Gate Trigger Current: 25 mA

A high maximum DC Gate Trigger Current of 25 mA allows for efficient and reliable triggering of the TRIAC, ensuring smooth operation and performance.

Configuration: SINGLE

The single configuration simplifies installation and reduces complexity, making it easier to integrate into various applications.

Package Shape: RECTANGULAR

A rectangular package shape provides a compact design, allowing for easier placement and mounting in limited spaces.

Terminal Form: THROUGH-HOLE

Through-hole terminals offer secure and reliable connections, ensuring stability and performance in demanding operating conditions.

Maximum Leakage Current: 2 mA

Low maximum leakage current of 2 mA minimizes power loss and enhances energy efficiency, making the product a cost-effective choice.

No. of Terminals: 3

Having 3 terminals provides flexibility for various connection options, enabling versatile usage in different circuit configurations.

Package Style (Meter): FLANGE MOUNT

Flange mount package style offers easy installation and secure mounting, enhancing the overall reliability and durability of the product.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature of 125 °C, the TRIAC can withstand elevated temperatures without compromising performance, ensuring reliability in extreme conditions.

Trigger Device Type: 4 QUADRANT LOGIC LEVEL TRIAC

The 4 quadrant logic level TRIAC allows for precise control and reliable switching in both quadrants, enhancing the versatility and functionality of the product.

Minimum Operating Temperature: -40 °C

A low minimum operating temperature of -40 °C ensures reliable performance even in cold environments, allowing for a wide range of operational possibilities.

Terminal Finish: TIN

Tin terminal finish provides excellent conductivity and corrosion resistance, ensuring long-term reliability and stable connections.

Terminal Position: SINGLE

Having a single terminal position simplifies installation and reduces complexity, making it easier to connect the TRIAC in various applications.

Maximum RMS On-state Current: 12 A

A high maximum RMS On-state Current of 12 A allows for efficient and reliable power handling, making the product suitable for high-current applications.

Maximum DC Gate Trigger Voltage: 1.3 V

A low maximum DC Gate Trigger Voltage of 1.3 V ensures efficient triggering and control, minimizing power consumption and enhancing overall performance.

Case Connection: ISOLATED

An isolated case connection enhances safety and reduces the risk of electrical interference, ensuring reliable operation in various environments.

Repetitive Peak Off-state Voltage: 600 V

A high Repetitive Peak Off-state Voltage of 600 V allows for reliable and robust performance in high-voltage applications, making the product a versatile choice.

Minimum Critical Rate of Rise of Off-state Voltage: 100 V/us

A minimum Critical Rate of Rise of Off-state Voltage of 100 V/us ensures stable and efficient switching, allowing for precise control and reliable operation.

Maximum Holding Current: 25 mA

A high Maximum Holding Current of 25 mA ensures reliable latching and stable operation, making the TRIAC suitable for a wide range of applications.

Reference Standard: UL RECOGNIZED

Being UL recognized assures the product meets high safety and performance standards, providing confidence in its reliability and quality.

Technical Specifications

Triode For Alternating Current (TRIAC) BTA12-600C4G attributes and parameters. Explore more Triode For Alternating Current (TRIAC) devices from Onsemi

Specs

Case Connection:

Configuration:

Minimum Critical Rate of Rise of Off-state Voltage:

100 V/us

Maximum DC Gate Trigger Current:

25 mA

Maximum DC Gate Trigger Voltage:

1.3 V

Maximum Holding Current:

25 mA

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

Maximum Leakage Current:

2 mA

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Qualification:

Not Qualified

Maximum RMS On-state Current:

12 A

Reference Standard:

UL RECOGNIZED

Repetitive Peak Off-state Voltage:

600 V

Sub-Category:

TRIACs

Surface Mount:

NO

Terminal Finish:

TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

Trigger Device Type:

Trade Compliance

BTA12-600C4G Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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