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TIC226S

Texas Instruments

TIC226S by Texas Instruments

TIC226S by Texas Instruments is a TRIAC with 8A max RMS current, 700V repetitive peak off-state voltage, and 125°C max operating temp. Ideal for AC power control applications due to its 50mA DC gate trigger current, -40°C min operating temp, and 2mA max leakage current.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 9,228 parts In-Stock

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Digiode

USA . 966 parts In-Stock

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Parana Technologies

USA . 1,349 parts In-Stock

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$4.345

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$4.763

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DigiPath Technology Company

USA . 2,344 parts In-Stock

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$4.784

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$4.402

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IDEA Electronic Components Group

UK . 962 parts In-Stock

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$4.882

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$4.394

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ChromeModa Solutions

Germany . 618 parts In-Stock

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$4.882

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$4.003

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Semicontronic

India . 1,179 parts In-Stock

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$5.100

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$4.947

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AZTECH Wire

Italy . 567 parts In-Stock

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One Stop Electronics

USA . 675 parts In-Stock

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$9.100

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Ampacity Inc.

Singapore . 1,310 parts In-Stock

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Kepictronics

USA . 15,000 parts In-Stock

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Corphita

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Corohmni

South Africa . 159 parts In-Stock

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Overview

Unlock the power of seamless current control with the TIC226S by Texas Instruments. Designed with precision and reliability in mind, this TRIAC device offers unparalleled performance for a wide range of applications. From lighting control to motor speed regulation, the TIC226S delivers smooth and efficient operation every time. Trust in Texas Instruments' reputation for quality and innovation, and experience the value and benefits that this product brings to your projects. Elevate your designs with the TIC226S and see the difference for yourself.

Feature Benefit Bullets

Maximum DC Gate Trigger Current: 50 mA

Having a high maximum DC gate trigger current allows for reliable and consistent triggering of the TRIAC, making it a dependable choice for applications requiring precise control.

Maximum Leakage Current: 2 mA

A low maximum leakage current helps in minimizing power loss and ensures efficient operation of the TRIAC, making it suitable for energy-sensitive applications.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature, this TRIAC can withstand elevated temperatures without sacrificing performance, making it suitable for industrial applications where heat may be a concern.

Trigger Device Type: TRIAC

Being a TRIAC, this device can handle both positive and negative half cycles of an AC voltage, offering versatility and compatibility with a wide range of AC applications.

Minimum Operating Temperature: -40 °C

With a low minimum operating temperature, this TRIAC can function reliably even in cold environments, making it suitable for outdoor or refrigeration applications.

Maximum RMS On-state Current: 8 A

A high maximum RMS on-state current rating allows the TRIAC to handle heavy loads with ease, making it suitable for applications requiring high power switching capabilities.

Maximum DC Gate Trigger Voltage: 2.5 V

Having a low maximum DC gate trigger voltage ensures efficient triggering of the TRIAC with minimal power consumption, making it an energy-efficient choice for control circuitry.

Repetitive Peak Off-state Voltage: 700 V

With a high repetitive peak off-state voltage, this TRIAC can reliably switch high voltage AC loads, making it a safe and durable choice for high-power applications.

Maximum Holding Current: 60 mA

A high maximum holding current ensures that the TRIAC remains in the on-state even after the gate current is removed, offering stability and reliability in continuous switching operations.

Technical Specifications

Triode For Alternating Current (TRIAC) TIC226S attributes and parameters. Explore more Triode For Alternating Current (TRIAC) devices from Texas Instruments

Specs

Maximum DC Gate Trigger Current:

50 mA

Maximum DC Gate Trigger Voltage:

2.5 V

Maximum Holding Current:

60 mA

Maximum Leakage Current:

2 mA

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Peak Reflow Temperature (C):

NOT SPECIFIED

Maximum RMS On-state Current:

8 A

Repetitive Peak Off-state Voltage:

700 V

Sub-Category:

TRIACs

Surface Mount:

NO

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trigger Device Type:

Trade Compliance

TIC226S Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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