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TIC215A

Texas Instruments

TIC215A by Texas Instruments

TIC215A by Texas Instruments is a single TRIAC with 3 terminals, featuring a max RMS on-state current of 3A and a repetitive peak off-state voltage of 100V. It operates b/w -40 to 110°C, ideal for applications requiring a 4 quadrant logic level TRIAC trigger device.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 7,334 parts In-Stock

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Digiode

USA . 1,001 parts In-Stock

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1,001

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Distributors (Availability)

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Parana Technologies

USA . 867 parts In-Stock

1+ parts

$2.949

100+ parts

-

1k+ parts

$3.450

10k+ parts

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867

$2.949

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$3.450

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ChromeModa Solutions

Germany . 3,141 parts In-Stock

1+ parts

$3.314

100+ parts

$2.717

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3,141

$3.314

$2.717

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IDEA Electronic Components Group

UK . 810 parts In-Stock

1+ parts

$3.314

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$2.983

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810

$3.314

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$2.983

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One Stop Electronics

USA . 392 parts In-Stock

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$6.100

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392

$6.100

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Ampacity Inc.

Singapore . 1,561 parts In-Stock

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$13.100

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$13.100

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AZTECH Wire

Italy . 614 parts In-Stock

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$14.465

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614

$14.465

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Semicontronic

India . 1,407 parts In-Stock

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$28.100

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$27.398

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$27.257

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1,407

$28.100

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$27.257

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Corphita

USA . 1,987 parts In-Stock

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DigiPath Technology Company

USA . 1,027 parts In-Stock

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$2.988

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$2.988

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Corohmni

South Africa . 205 parts In-Stock

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Overview

Enhance your electronic projects with the TIC215A by Texas Instruments, a high-quality TRIAC that delivers exceptional performance and reliability. Manufactured by the renowned Texas Instruments, this TRIAC is versatile in its applications, making it perfect for a wide range of projects. With a maximum RMS on-state current of 3A and a repetitive peak off-state voltage of 100V, the TIC215A offers customers unmatched value and benefits. Upgrade your circuits today with the TIC215A and experience the superior quality and advantages that only Texas Instruments can provide.

Feature Benefit Bullets

Package Body Material: METAL

Metal package body provides durability and good heat dissipation, ensuring reliable performance even in high temperature environments.

Maximum DC Gate Trigger Current: 5 mA

Low gate trigger current allows for efficient and precise control of the TRIAC, making it suitable for a wide range of applications.

Configuration: SINGLE

Single configuration simplifies circuit design and installation, making it user-friendly and easy to implement.

Package Shape: ROUND

Round package shape allows for easy mounting and integration into different electronic devices or systems.

Terminal Form: WIRE

Wire terminal form provides a secure and reliable connection for the TRIAC, ensuring stable operation and reducing the risk of malfunctions.

Maximum Leakage Current: 2 mA

Low leakage current minimizes power wastage and improves overall efficiency of the TRIAC, making it an energy-efficient choice.

No. of Terminals: 3

Having three terminals allows for flexible connectivity options and compatibility with a variety of circuit configurations.

Package Style (Meter): CYLINDRICAL

Cylindrical package style provides a compact and space-saving design, making it suitable for applications with limited space constraints.

Maximum Operating Temperature: 110 °C

High maximum operating temperature range ensures that the TRIAC can withstand elevated temperatures without compromising performance, increasing its reliability and longevity.

Trigger Device Type: 4 QUADRANT LOGIC LEVEL TRIAC

4 quadrant logic level TRIAC offers precise and efficient control over power output in both directions, making it ideal for applications requiring high performance and accuracy.

Minimum Operating Temperature: -40 °C

Low minimum operating temperature allows the TRIAC to function reliably in cold environments, ensuring consistent performance in a wide range of conditions.

Terminal Position: BOTTOM

Bottom terminal position facilitates easy installation and maintenance, offering convenience and ease of use.

Maximum RMS On-state Current: 3 A

High maximum RMS on-state current capability enables the TRIAC to handle heavy loads and high-power applications with ease.

Maximum DC Gate Trigger Voltage: 2.2 V

Low gate trigger voltage ensures efficient and accurate control over the TRIAC, reducing power consumption and improving overall performance.

Case Connection: MAIN TERMINAL 2

Main terminal 2 case connection simplifies wiring and connectivity, streamlining installation and setup processes.

Repetitive Peak Off-state Voltage: 100 V

Repetitive peak off-state voltage rating of 100 V provides reliable protection against voltage spikes and surges, ensuring the safety and longevity of the TRIAC.

Maximum Holding Current: 30 mA

High maximum holding current capability allows the TRIAC to maintain its on-state even under varying load conditions, ensuring stable and consistent performance.

Technical Specifications

Triode For Alternating Current (TRIAC) TIC215A attributes and parameters. Explore more Triode For Alternating Current (TRIAC) devices from Texas Instruments

Specs

Additional Features:

SENSITIVE GATE

Case Connection:

Configuration:

Maximum DC Gate Trigger Current:

5 mA

Maximum DC Gate Trigger Voltage:

2.2 V

Maximum Holding Current:

30 mA

JEDEC-95 Code:

TO-39

JESD-30 Code:

O-MBCY-W3

Maximum Leakage Current:

2 mA

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

110 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

Peak Reflow Temperature (C):

NOT SPECIFIED

Qualification:

Not Qualified

Maximum RMS On-state Current:

3 A

Repetitive Peak Off-state Voltage:

100 V

Sub-Category:

TRIACs

Surface Mount:

NO

Terminal Form:

WIRE

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trigger Device Type:

Trade Compliance

TIC215A Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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