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DTC12E-N

Onsemi

DTC12E-N by Onsemi

DTC12E-N by Onsemi is a TRIAC with 1.5V max on-state voltage, 30mA max DC gate trigger current, and 2mA max leakage current. It operates b/w -45 °C to 125°C, suitable for applications requiring up to 12A RMS on-state current such as AC power control systems.

Median Price

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Lifecycle Status

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2

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1k+

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Digiode

USA . 1,839 parts In-Stock

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Vyrian

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Problanco Electronics

Mexico . 6,941 parts In-Stock

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TANS Electronics

Latvia . 6,709 parts In-Stock

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SupplyDigital Components

Austria . 4,534 parts In-Stock

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Kulean Microsystems

USA . 4,520 parts In-Stock

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Northwest PG Solutions

USA . 2,002 parts In-Stock

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Corphita

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UHIMA Technologies

Türkiye . 938 parts In-Stock

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Corohmni

South Africa . 382 parts In-Stock

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Overview

Discover the power and reliability of the DTC12E-N by Onsemi, a top-quality Triode For Alternating Current (TRIAC) that delivers exceptional performance in a variety of applications. With a maximum RMS On-state Current of 12A and a Repetitive Peak Off-state Voltage of 400V, this TRIAC is designed to handle high-power loads with ease. Onsemi's commitment to excellence ensures that you can trust in the durability and efficiency of this product. Whether you're looking to control lighting, heating systems, or motor speed, the DTC12E-N offers unmatched value, benefits, and advantages for all your needs. Upgrade to Onsemi today and experience the difference!

Feature Benefit Bullets

Maximum On-state Voltage: 1.5 V

This low voltage ensures efficient performance and minimal power loss during operation.

Maximum DC Gate Trigger Current: 30 mA

A higher gate trigger current allows for reliable and consistent switching of the TRIAC.

Maximum Leakage Current: 2 mA

Low leakage current helps in reducing power consumption and improving overall efficiency.

Maximum Operating Temperature: 125 °C

With a high operating temperature range, this TRIAC is suitable for a wide range of application environments.

Trigger Device Type: TRIAC

Being a TRIAC, this device allows for bidirectional control of current flow, making it versatile for various applications.

Minimum Operating Temperature: -45 °C

The TRIAC can operate in low temperature conditions, making it suitable for different climates and environments.

Maximum RMS On-state Current: 12 A

With a high current rating, this TRIAC can handle heavy loads and high power applications efficiently.

Maximum DC Gate Trigger Voltage: 2 V

Low gate trigger voltage ensures quick and reliable switching of the TRIAC.

Repetitive Peak Off-state Voltage: 400 V

With a high off-state voltage rating, this TRIAC can withstand high voltage applications without breakdown.

Minimum Critical Rate of Rise of Commutation Voltage: 10 V/us

A high critical rate of rise ensures smooth and rapid switching of the TRIAC, reducing chances of voltage spikes.

Maximum Holding Current: 50 mA

A higher holding current helps in maintaining the ON state of the TRIAC even under fluctuating conditions.

Technical Specifications

Triode For Alternating Current (TRIAC) DTC12E-N attributes and parameters. Explore more Triode For Alternating Current (TRIAC) devices from Onsemi

Specs

Minimum Critical Rate of Rise of Commutation Voltage:

10 V/us

Maximum DC Gate Trigger Current:

30 mA

Maximum DC Gate Trigger Voltage:

2 V

Maximum Holding Current:

50 mA

Maximum Leakage Current:

2 mA

Maximum On-state Voltage:

1.5 V

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-45 Cel

Maximum RMS On-state Current:

12 A

Repetitive Peak Off-state Voltage:

400 V

Sub-Category:

TRIACs

Surface Mount:

NO

Trigger Device Type:

Trade Compliance

DTC12E-N Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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