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DTC10C-N

Onsemi

DTC10C-N by Onsemi

DTC10C-N by Onsemi is a TRIAC with 1.5V max on-state voltage, 30mA max DC gate trigger current, and 2mA max leakage current. It operates b/w -40 °C to 125°C, suitable for AC power control applications like dimmer switches and motor speed controllers.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 2,053 parts In-Stock

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Vyrian

USA . 1,242 parts In-Stock

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Native Components

USA . 458 parts In-Stock

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$0.860

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458

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Northwest PG Solutions

USA . 1,069 parts In-Stock

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$0.946

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SupplyDigital Components

Austria . 6,739 parts In-Stock

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Kulean Microsystems

USA . 5,935 parts In-Stock

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Problanco Electronics

Mexico . 3,972 parts In-Stock

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Corphita

USA . 2,044 parts In-Stock

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TANS Electronics

Latvia . 385 parts In-Stock

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UHIMA Technologies

Türkiye . 194 parts In-Stock

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Corohmni

South Africa . 88 parts In-Stock

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Overview

Unlock the power of precise control with the DTC10C-N by Onsemi. Crafted with precision and innovation, this TRIAC device offers unmatched quality and reliability for a wide range of applications. From lighting control to motor speed regulation, this product delivers exceptional performance and efficiency. Experience seamless operation and peace of mind knowing that you have a trusted solution at your fingertips. Elevate your projects with the superior value and benefits that the DTC10C-N brings to the table.

Feature Benefit Bullets

Maximum On-state Voltage: 1.5 V

Low on-state voltage means lower power dissipation and better efficiency, making this product suitable for high-performance applications.

Maximum DC Gate Trigger Current: 30 mA

Higher trigger current ensures reliable and consistent switching of the TRIAC, making it suitable for industrial and high-demand applications.

Maximum Leakage Current: 2 mA

Low leakage current results in better overall performance and reliability of the TRIAC, making it a dependable choice for various applications.

Maximum Operating Temperature: 125 °C

High operating temperature capability allows this TRIAC to be used in environments where temperature fluctuations are common, ensuring consistent performance.

Trigger Device Type: TRIAC

Being a TRIAC, this product is capable of controlling both halves of an alternating current waveform, making it versatile for different AC switching applications.

Maximum RMS On-state Current: 10 A

High RMS on-state current allows this TRIAC to handle heavy loads without overheating, making it suitable for high-power applications.

Maximum DC Gate Trigger Voltage: 2 V

Low trigger voltage results in efficient control of the TRIAC, making it suitable for low-power applications where precise triggering is required.

Repetitive Peak Off-state Voltage: 200 V

High off-state voltage rating ensures the TRIAC can withstand high voltages in off-state conditions, making it suitable for diverse applications.

Minimum Critical Rate of Rise of Commutation Voltage: 10 V/us

High critical rate of rise of commutation voltage ensures fast and reliable commutation, making this TRIAC suitable for applications requiring quick switching.

Maximum Holding Current: 50 mA

Higher holding current means the TRIAC can remain in the on-state reliably, making it a good choice for applications requiring stable operation.

Technical Specifications

Triode For Alternating Current (TRIAC) DTC10C-N attributes and parameters. Explore more Triode For Alternating Current (TRIAC) devices from Onsemi

Specs

Minimum Critical Rate of Rise of Commutation Voltage:

10 V/us

Maximum DC Gate Trigger Current:

30 mA

Maximum DC Gate Trigger Voltage:

2 V

Maximum Holding Current:

50 mA

Maximum Leakage Current:

2 mA

Maximum On-state Voltage:

1.5 V

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Maximum RMS On-state Current:

10 A

Repetitive Peak Off-state Voltage:

200 V

Sub-Category:

TRIACs

Surface Mount:

NO

Trigger Device Type:

Trade Compliance

DTC10C-N Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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