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DTC10E-N

Onsemi

DTC10E-N by Onsemi

DTC10E-N by Onsemi is a TRIAC with max on-state voltage of 1.5V, DC gate trigger current of 30mA, and leakage current of 2mA. It operates b/w -45 to 125 °C and has a max RMS on-state current of 10A. Ideal for AC applications requiring precise switching control.

Median Price

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Lifecycle Status

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2

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1k+

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Digiode

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Vyrian

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TANS Electronics

Latvia . 4,784 parts In-Stock

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SupplyDigital Components

Austria . 3,629 parts In-Stock

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Kulean Microsystems

USA . 3,375 parts In-Stock

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Northwest PG Solutions

USA . 815 parts In-Stock

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Problanco Electronics

Mexico . 724 parts In-Stock

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Corohmni

South Africa . 461 parts In-Stock

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UHIMA Technologies

Türkiye . 412 parts In-Stock

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Corphita

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Native Components

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Overview

Unlock the power of seamless current control with the DTC10E-N by Onsemi. Crafted with precision and expertise, this TRIAC device offers unparalleled performance and reliability for a wide range of applications. From lighting systems to motor controls, this product delivers superior efficiency and precision, ensuring optimal functionality at all times. Experience the value of quality engineering with the DTC10E-N and elevate your projects to new heights.

Feature Benefit Bullets

Maximum On-state Voltage: 1.5 V

Low on-state voltage helps in reducing power losses and makes the product more efficient.

Maximum DC Gate Trigger Current: 30 mA

Allows for precise control and triggering of the TRIAC which is essential for its performance.

Maximum Leakage Current: 2 mA

Low leakage current ensures that the TRIAC does not conduct when it should be off, improving overall system efficiency.

Maximum Operating Temperature: 125 °C

Ability to operate at high temperatures makes this TRIAC suitable for a wide range of applications.

Trigger Device Type: TRIAC

Being a TRIAC, this product is designed for AC power control applications and can handle alternating current smoothly.

Repetitive Peak Off-state Voltage: 400 V

High off-state voltage capability allows for reliable performance in demanding applications.

Minimum Critical Rate of Rise of Commutation Voltage: 10 V/us

Ensures fast and reliable switching, critical for applications where precise control is necessary.

Maximum Holding Current: 50 mA

High holding current ensures that the TRIAC remains ON until desired triggering conditions are met, improving system stability.

Technical Specifications

Triode For Alternating Current (TRIAC) DTC10E-N attributes and parameters. Explore more Triode For Alternating Current (TRIAC) devices from Onsemi

Specs

Minimum Critical Rate of Rise of Commutation Voltage:

10 V/us

Maximum DC Gate Trigger Current:

30 mA

Maximum DC Gate Trigger Voltage:

2 V

Maximum Holding Current:

50 mA

Maximum Leakage Current:

2 mA

Maximum On-state Voltage:

1.5 V

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-45 Cel

Maximum RMS On-state Current:

10 A

Repetitive Peak Off-state Voltage:

400 V

Sub-Category:

TRIACs

Surface Mount:

NO

Trigger Device Type:

Trade Compliance

DTC10E-N Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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