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DTC10G-N

Onsemi

DTC10G-N by Onsemi

DTC10G-N by Onsemi is a TRIAC with 1.5V max on-state voltage, 30mA max DC gate trigger current, and 2mA max leakage current. It operates b/w -40 to 125 °C and has a max RMS on-state current of 10A. Ideal for applications requiring precise AC power control in various electronic devices.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 1,971 parts In-Stock

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Vyrian

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SupplyDigital Components

Austria . 7,195 parts In-Stock

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TANS Electronics

Latvia . 2,491 parts In-Stock

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Kulean Microsystems

USA . 880 parts In-Stock

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Native Components

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Corphita

USA . 715 parts In-Stock

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UHIMA Technologies

Türkiye . 603 parts In-Stock

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Problanco Electronics

Mexico . 542 parts In-Stock

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Northwest PG Solutions

USA . 289 parts In-Stock

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Corohmni

South Africa . 139 parts In-Stock

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Overview

Unlock the power of innovation with the DTC10G-N by Onsemi. Designed for optimal performance and reliability, this TRIAC device is a game-changer in the industry. From lighting control to motor speed regulation, its versatile applications make it a must-have for any project. Trust in the quality and expertise of Onsemi to deliver excellence every time. Elevate your designs with the DTC10G-N and experience the value, benefits, and advantages it brings to your creations.

Feature Benefit Bullets

Maximum On-state Voltage: 1.5 V

Low on-state voltage helps in reducing power consumption and heat dissipation, making the product more energy-efficient.

Maximum DC Gate Trigger Current: 30 mA

The high gate trigger current ensures reliable and efficient switching performance, making the product suitable for various applications.

Maximum Leakage Current: 2 mA

Low leakage current helps in minimizing power loss and improving the overall efficiency of the product.

Maximum Operating Temperature: 125 °C

Wide operating temperature range allows the product to perform consistently in different environmental conditions.

Trigger Device Type: TRIAC

The TRIAC trigger device type provides precise control over switching operations, increasing the product's performance reliability.

Maximum RMS On-state Current: 10 A

High on-state current rating enables the product to handle heavy loads and high-current applications effectively.

Maximum DC Gate Trigger Voltage: 2 V

Low gate trigger voltage ensures efficient and reliable triggering of the device, enhancing overall performance.

Repetitive Peak Off-state Voltage: 600 V

High off-state voltage rating allows the product to withstand high-voltage applications without compromising safety or performance.

Minimum Critical Rate of Rise of Commutation Voltage: 10 V/us

The high critical rate of rise of commutation voltage ensures quick and effective commutation, improving the product's overall efficiency.

Maximum Holding Current: 50 mA

High holding current ensures reliable operation and helps in maintaining the on-state condition of the device, making it suitable for continuous operation.

Technical Specifications

Triode For Alternating Current (TRIAC) DTC10G-N attributes and parameters. Explore more Triode For Alternating Current (TRIAC) devices from Onsemi

Specs

Minimum Critical Rate of Rise of Commutation Voltage:

10 V/us

Maximum DC Gate Trigger Current:

30 mA

Maximum DC Gate Trigger Voltage:

2 V

Maximum Holding Current:

50 mA

Maximum Leakage Current:

2 mA

Maximum On-state Voltage:

1.5 V

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Maximum RMS On-state Current:

10 A

Repetitive Peak Off-state Voltage:

600 V

Sub-Category:

TRIACs

Surface Mount:

NO

Trigger Device Type:

Trade Compliance

DTC10G-N Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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