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DTC12C-N

Onsemi

DTC12C-N by Onsemi

DTC12C-N by Onsemi is a TRIAC with 1.5V max on-state voltage, 30mA max DC gate trigger current, and 2mA max leakage current. It operates b/w -40 °C to 125°C and has a max RMS on-state current of 12A. Ideal for applications requiring reliable switching in AC circuits.

Median Price

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Lifecycle Status

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Vyrian

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Kulean Microsystems

USA . 6,191 parts In-Stock

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Problanco Electronics

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Corphita

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SupplyDigital Components

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TANS Electronics

Latvia . 1,426 parts In-Stock

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Northwest PG Solutions

USA . 854 parts In-Stock

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UHIMA Technologies

Türkiye . 836 parts In-Stock

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Native Components

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Overview

Discover the power of the DTC12C-N by Onsemi, a high-quality TRIAC that offers superior performance and reliability. Manufactured by Onsemi, a trusted leader in semiconductor technology, this product is perfect for a variety of applications. From lighting control to motor speed regulation, the DTC12C-N delivers exceptional value with its low on-state voltage, high maximum RMS current, and wide operating temperature range. Trust Onsemi to provide you with the best-in-class solutions for all your TRIAC needs.

Feature Benefit Bullets

Maximum On-state Voltage: 1.5 V

Low on-state voltage helps in minimizing power dissipation and heat generation, making this product energy-efficient.

Maximum DC Gate Trigger Current: 30 mA

The high DC gate trigger current ensures reliable and consistent operation of the TRIAC.

Maximum Leakage Current: 2 mA

Low leakage current helps in preventing unwanted activation of the TRIAC, enhancing the overall performance and reliability of the product.

Maximum Operating Temperature: 125 °C

The wide operating temperature range allows this TRIAC to function efficiently in various environmental conditions.

Trigger Device Type: TRIAC

Being a TRIAC, this device is suitable for AC power control applications, providing versatility and flexibility in use.

Minimum Operating Temperature: -40 °C

The ability to operate at low temperatures makes this TRIAC suitable for use in different climates and environments.

Maximum RMS On-state Current: 12 A

With a high maximum RMS on-state current, this TRIAC can handle heavy loads with ease, making it suitable for various high-power applications.

Maximum DC Gate Trigger Voltage: 2 V

The low DC gate trigger voltage ensures efficient and precise triggering of the TRIAC, enhancing its performance and reliability.

Repetitive Peak Off-state Voltage: 200 V

The high off-state voltage rating provides robust insulation and protection against voltage spikes, ensuring the durability and safety of the product.

Minimum Critical Rate of Rise of Commutation Voltage: 10 V/us

This TRIAC's fast commutation voltage rate ensures quick and reliable switching, making it suitable for time-sensitive applications.

Maximum Holding Current: 50 mA

The high holding current ensures the TRIAC remains in the on-state even when the gate current drops, providing stability and reliability in operation.

Technical Specifications

Triode For Alternating Current (TRIAC) DTC12C-N attributes and parameters. Explore more Triode For Alternating Current (TRIAC) devices from Onsemi

Specs

Minimum Critical Rate of Rise of Commutation Voltage:

10 V/us

Maximum DC Gate Trigger Current:

30 mA

Maximum DC Gate Trigger Voltage:

2 V

Maximum Holding Current:

50 mA

Maximum Leakage Current:

2 mA

Maximum On-state Voltage:

1.5 V

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Maximum RMS On-state Current:

12 A

Repetitive Peak Off-state Voltage:

200 V

Sub-Category:

TRIACs

Surface Mount:

NO

Trigger Device Type:

Trade Compliance

DTC12C-N Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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