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DTC12G-N

Onsemi

DTC12G-N by Onsemi

DTC12G-N by Onsemi is a TRIAC with 1.5V max on-state voltage, 30mA max DC gate trigger current, and 2mA max leakage current. It operates b/w -40 °C to 125°C, suitable for applications requiring up to 12A RMS on-state current such as lighting controls and motor speed control.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 1,350 parts In-Stock

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Digiode

USA . 225 parts In-Stock

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Native Components

USA . 694 parts In-Stock

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$0.083

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$0.080

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Northwest PG Solutions

USA . 1,826 parts In-Stock

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$0.091

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$0.081

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$0.081

Kulean Microsystems

USA . 7,790 parts In-Stock

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7,790

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TANS Electronics

Latvia . 6,674 parts In-Stock

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Problanco Electronics

Mexico . 5,858 parts In-Stock

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SupplyDigital Components

Austria . 2,818 parts In-Stock

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Corphita

USA . 1,411 parts In-Stock

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UHIMA Technologies

Türkiye . 607 parts In-Stock

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Corohmni

South Africa . 115 parts In-Stock

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Overview

Unleash the power of efficient and reliable electrical control with the DTC12G-N by Onsemi. Crafted with precision and expertise, this TRIAC device offers seamless performance in a variety of applications. From lighting control to motor speed regulation, this product delivers unparalleled value and benefits to customers seeking top-notch quality. Trust in Onsemi's reputation for excellence and elevate your projects with the DTC12G-N. Experience the difference today.

Feature Benefit Bullets

Maximum On-state Voltage: 1.5 V

Low maximum on-state voltage results in lower power dissipation and higher efficiency, making this product a good choice for energy-efficient applications.

Maximum DC Gate Trigger Current: 30 mA

With a high maximum DC gate trigger current, this TRIAC can be easily triggered to conduct, ensuring reliable operation in various applications.

Maximum Leakage Current: 2 mA

Low maximum leakage current ensures minimal power loss and enhances the overall performance and reliability of the product.

Maximum Operating Temperature: 125 °C

High maximum operating temperature allows the TRIAC to withstand harsh environmental conditions, making it suitable for a wide range of industrial applications.

Trigger Device Type: TRIAC

Being a TRIAC, this product can conduct in both directions, making it ideal for AC switching applications.

Minimum Operating Temperature: -40 °C

Low minimum operating temperature ensures reliable performance even in extreme cold conditions, making this product versatile and suitable for various environments.

Maximum RMS On-state Current: 12 A

High maximum RMS on-state current allows the TRIAC to handle high current loads efficiently, making it a reliable choice for high-power applications.

Maximum DC Gate Trigger Voltage: 2 V

Low maximum DC gate trigger voltage ensures easy and precise triggering of the device, enhancing its performance and reliability.

Repetitive Peak Off-state Voltage: 600 V

High repetitive peak off-state voltage allows the TRIAC to switch high voltage loads, making it suitable for a wide range of industrial and domestic applications.

Minimum Critical Rate of Rise of Commutation Voltage: 10 V/us

With a minimum critical rate of rise of commutation voltage, this TRIAC offers fast and reliable commutation, ensuring precise switching and efficient operation.

Maximum Holding Current: 50 mA

High maximum holding current ensures stable operation once the TRIAC is triggered, making it a reliable choice for continuous and repetitive switching applications.

Technical Specifications

Triode For Alternating Current (TRIAC) DTC12G-N attributes and parameters. Explore more Triode For Alternating Current (TRIAC) devices from Onsemi

Specs

Minimum Critical Rate of Rise of Commutation Voltage:

10 V/us

Maximum DC Gate Trigger Current:

30 mA

Maximum DC Gate Trigger Voltage:

2 V

Maximum Holding Current:

50 mA

Maximum Leakage Current:

2 mA

Maximum On-state Voltage:

1.5 V

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Maximum RMS On-state Current:

12 A

Repetitive Peak Off-state Voltage:

600 V

Sub-Category:

TRIACs

Surface Mount:

NO

Trigger Device Type:

Trade Compliance

DTC12G-N Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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