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DTA16F

Onsemi

DTA16F by Onsemi

DTA16F by Onsemi is a TRIAC with 1.4V max on-state voltage, 50mA max DC gate trigger current, and 2mA max leakage current. It operates at up to 125 °C and has a max RMS on-state current of 16A. Ideal for AC power control applications requiring precise switching capabilities.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 1,342 parts In-Stock

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Digiode

USA . 1,216 parts In-Stock

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 384 parts In-Stock

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$175.246

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$168.236

384

$175.246

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$168.236

Northwest PG Solutions

USA . 715 parts In-Stock

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$192.771

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715

$192.771

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SupplyDigital Components

Austria . 2,885 parts In-Stock

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Problanco Electronics

Mexico . 2,599 parts In-Stock

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Corphita

USA . 2,246 parts In-Stock

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Kulean Microsystems

USA . 463 parts In-Stock

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UHIMA Technologies

Türkiye . 405 parts In-Stock

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TANS Electronics

Latvia . 118 parts In-Stock

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Corohmni

South Africa . 103 parts In-Stock

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Overview

Enhance your electronic projects with the high-quality DTA16F TRIAC by Onsemi. Designed for a wide range of alternating current applications, this reliable component offers exceptional performance and durability. Perfect for controlling power in various devices, the DTA16F provides customers with unbeatable value and reliability. Trust Onsemi's expertise and elevate your projects with the advanced capabilities of the DTA16F.

Feature Benefit Bullets

Maximum On-state Voltage: 1.4 V

Low on-state voltage can result in reduced power dissipation and increased efficiency.

Maximum DC Gate Trigger Current: 50 mA

High gate trigger current allows for reliable and fast switching of the TRIAC.

Maximum Leakage Current: 2 mA

Low leakage current ensures minimal power loss when the TRIAC is in the off-state.

Maximum Operating Temperature: 125 °C

High operating temperature range allows for versatile use in various environments without risking damage.

Trigger Device Type: TRIAC

TRIAC trigger device type indicates compatibility with AC circuits, making it suitable for a wide range of applications.

Maximum RMS On-state Current: 16 A

High RMS on-state current rating allows the TRIAC to handle high current loads effectively.

Maximum DC Gate Trigger Voltage: 3 V

Low gate trigger voltage ensures efficient triggering of the TRIAC at a lower voltage level.

Repetitive Peak Off-state Voltage: 500 V

High off-state voltage rating allows the TRIAC to block voltage effectively and prevent leakage during off-state.

Technical Specifications

Triode For Alternating Current (TRIAC) DTA16F attributes and parameters. Explore more Triode For Alternating Current (TRIAC) devices from Onsemi

Specs

Maximum DC Gate Trigger Current:

50 mA

Maximum DC Gate Trigger Voltage:

3 V

Maximum Leakage Current:

2 mA

Maximum On-state Voltage:

1.4 V

Maximum Operating Temperature:

125 Cel

Maximum RMS On-state Current:

16 A

Repetitive Peak Off-state Voltage:

500 V

Sub-Category:

TRIACs

Surface Mount:

NO

Trigger Device Type:

Trade Compliance

DTA16F Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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