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DTA16E

Onsemi

DTA16E by Onsemi

DTA16E by Onsemi is a TRIAC with 1.4V max on-state voltage, 50mA DC gate trigger current, and 2mA leakage current. It operates at up to 125 °C and has a max RMS on-state current of 16A. Ideal for AC power control applications requiring precise switching capabilities.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 2,059 parts In-Stock

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Digiode

USA . 381 parts In-Stock

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381

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Distributors (Availability)

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Native Components

USA . 237 parts In-Stock

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$0.135

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$0.130

237

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Northwest PG Solutions

USA . 1,235 parts In-Stock

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$0.149

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$0.131

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$0.149

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$0.131

Problanco Electronics

Mexico . 4,015 parts In-Stock

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TANS Electronics

Latvia . 3,477 parts In-Stock

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SupplyDigital Components

Austria . 2,836 parts In-Stock

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Kulean Microsystems

USA . 396 parts In-Stock

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Corohmni

South Africa . 381 parts In-Stock

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UHIMA Technologies

Türkiye . 300 parts In-Stock

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Corphita

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Overview

Experience superior quality and performance with the DTA16E by Onsemi. As a leading manufacturer in the industry, Onsemi delivers reliable and innovative solutions for TRIAC applications. The DTA16E offers customers value through its maximum RMS On-state current of 16A, ensuring efficient operation. With a maximum DC Gate Trigger Voltage of 3V and Repetitive Peak Off-state Voltage of 400V, this TRIAC device is perfect for a wide range of applications. Trust Onsemi to provide you with the quality and advantages you need for your next project.

Feature Benefit Bullets

Maximum On-state Voltage: 1.4 V

Low on-state voltage helps in reducing power losses and improving efficiency of the product.

Maximum DC Gate Trigger Current: 50 mA

High gate trigger current allows for reliable switching of the TRIAC, ensuring proper functionality.

Maximum Leakage Current: 2 mA

Low leakage current minimizes power wastage and helps in improving overall efficiency of the product.

Maximum Operating Temperature: 125 °C

High operating temperature allows for reliable performance in various environmental conditions.

Trigger Device Type: TRIAC

Being a TRIAC, this product can control both positive and negative halves of an AC waveform, making it versatile for different applications.

Maximum RMS On-state Current: 16 A

High on-state current rating allows the TRIAC to handle heavy loads with ease, making it suitable for a wide range of applications.

Maximum DC Gate Trigger Voltage: 3 V

Low gate trigger voltage ensures efficient triggering of the device and requires less input power for operation.

Repetitive Peak Off-state Voltage: 400 V

High off-state voltage rating allows the TRIAC to withstand high voltage spikes and surges, increasing the durability of the product.

Technical Specifications

Triode For Alternating Current (TRIAC) DTA16E attributes and parameters. Explore more Triode For Alternating Current (TRIAC) devices from Onsemi

Specs

Maximum DC Gate Trigger Current:

50 mA

Maximum DC Gate Trigger Voltage:

3 V

Maximum Leakage Current:

2 mA

Maximum On-state Voltage:

1.4 V

Maximum Operating Temperature:

125 Cel

Maximum RMS On-state Current:

16 A

Repetitive Peak Off-state Voltage:

400 V

Sub-Category:

TRIACs

Surface Mount:

NO

Trigger Device Type:

Trade Compliance

DTA16E Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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