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DTA1E

Onsemi

DTA1E by Onsemi

DTA1E by Onsemi is a TRIAC with 400V repetitive peak off-state voltage, 1A max RMS on-state current, and -40 to 125 °C operating temperature range. Ideal for AC power control applications requiring a trigger device with 2V max DC gate trigger voltage and 5mA max DC gate trigger current.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 1,656 parts In-Stock

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Digiode

USA . 1,544 parts In-Stock

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 533 parts In-Stock

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$0.119

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$0.115

533

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$0.115

Northwest PG Solutions

USA . 1,136 parts In-Stock

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$0.131

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$0.116

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$0.116

Kulean Microsystems

USA . 7,854 parts In-Stock

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TANS Electronics

Latvia . 5,810 parts In-Stock

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Problanco Electronics

Mexico . 2,349 parts In-Stock

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SupplyDigital Components

Austria . 2,074 parts In-Stock

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Corphita

USA . 1,698 parts In-Stock

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UHIMA Technologies

Türkiye . 214 parts In-Stock

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Corohmni

South Africa . 186 parts In-Stock

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Overview

Enhance your electronic designs with the high-quality DTA1E by Onsemi. As a leading manufacturer in the industry, Onsemi ensures top-notch performance and reliability. The DTA1E falls under the category of Triode For Alternating Current (TRIAC), making it suitable for a wide range of applications. Customers can expect value and benefits such as precise control and efficiency when using this product. Elevate your projects with the DTA1E and experience the advantages it brings to your designs.

Feature Benefit Bullets

Maximum On-state Voltage: 1.5 V

Low On-state voltage helps in reducing power losses and increasing efficiency.

Maximum DC Gate Trigger Current: 5 mA

Low gate trigger current ensures easy and efficient control of the TRIAC.

Maximum Leakage Current: 0.01 mA

Low leakage current ensures minimal power wastage when TRIAC is in off-state.

Maximum Operating Temperature: 125 °C

Wide operating temperature range allows the TRIAC to be used in various environments without risk of damage.

Minimum Operating Temperature: -40 °C

Wide temperature range ensures reliable operation even in cold environments.

Maximum RMS On-state Current: 1 A

High RMS on-state current capability ensures the TRIAC can handle high loads effectively.

Maximum DC Gate Trigger Voltage: 2 V

Low gate trigger voltage makes it easier to control the TRIAC using low voltage signals.

Repetitive Peak Off-state Voltage: 400 V

High off-state voltage capability allows the TRIAC to be used in applications with varying voltage requirements.

Maximum Holding Current: 10 mA

High holding current ensures the TRIAC remains in the on-state even under varying load conditions.

Technical Specifications

Triode For Alternating Current (TRIAC) DTA1E attributes and parameters. Explore more Triode For Alternating Current (TRIAC) devices from Onsemi

Specs

Maximum DC Gate Trigger Current:

5 mA

Maximum DC Gate Trigger Voltage:

2 V

Maximum Holding Current:

10 mA

Maximum Leakage Current:

.01 mA

Maximum On-state Voltage:

1.5 V

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Maximum RMS On-state Current:

1 A

Repetitive Peak Off-state Voltage:

400 V

Sub-Category:

TRIACs

Surface Mount:

NO

Trigger Device Type:

Trade Compliance

DTA1E Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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