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DTA12E

Onsemi

DTA12E by Onsemi

DTA12E by Onsemi is a TRIAC with 1.4V max on-state voltage, 50mA max DC gate trigger current, and 2mA max leakage current. It operates at up to 125 °C and has a max RMS on-state current of 12A. Ideal for applications requiring precise AC power control like dimmers and motor speed controllers.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

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< 1k

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Digiode

USA . 799 parts In-Stock

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Vyrian

USA . 56 parts In-Stock

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Native Components

USA . 518 parts In-Stock

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$1.515

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Northwest PG Solutions

USA . 1,391 parts In-Stock

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Kulean Microsystems

USA . 8,172 parts In-Stock

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TANS Electronics

Latvia . 6,589 parts In-Stock

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Problanco Electronics

Mexico . 2,870 parts In-Stock

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Corphita

USA . 1,402 parts In-Stock

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UHIMA Technologies

Türkiye . 903 parts In-Stock

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SupplyDigital Components

Austria . 181 parts In-Stock

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Corohmni

South Africa . 172 parts In-Stock

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Overview

Enhance your electrical projects with the reliable DTA12E Triode For Alternating Current (TRIAC) by Onsemi. Known for their superior quality and innovative technology, Onsemi delivers top-notch components that exceed industry standards. The DTA12E is versatile, offering a wide range of applications in various electronic devices. Customers can trust in the value and benefits this product provides, from its maximum on-state voltage to its repetitive peak off-state voltage. Upgrade your designs with the DTA12E and experience the advantages it brings to your projects.

Feature Benefit Bullets

Maximum On-state Voltage: 1.4 V

Low on-state voltage helps in reducing power dissipation and improving efficiency of the product.

Maximum DC Gate Trigger Current: 50 mA

High gate trigger current allows for reliable and fast switching of the TRIAC, ensuring proper functioning in various applications.

Maximum Leakage Current: 2 mA

Low leakage current helps in minimizing power loss and enhances the overall performance of the product.

Maximum Operating Temperature: 125 °C

Wide operating temperature range allows for operation in challenging environments, increasing the versatility of the product.

Trigger Device Type: TRIAC

TRIAC trigger device type ensures compatibility with AC circuits and makes it suitable for controlling power in AC applications.

Maximum RMS On-state Current: 12 A

High RMS on-state current rating enables the TRIAC to handle heavy loads effectively and efficiently.

Maximum DC Gate Trigger Voltage: 3 V

Low gate trigger voltage requirement simplifies the drive circuit design and helps in reducing the overall cost of the product.

Repetitive Peak Off-state Voltage: 400 V

High off-state voltage rating ensures reliability and safety in high voltage applications, making the product a dependable choice.

Technical Specifications

Triode For Alternating Current (TRIAC) DTA12E attributes and parameters. Explore more Triode For Alternating Current (TRIAC) devices from Onsemi

Specs

Maximum DC Gate Trigger Current:

50 mA

Maximum DC Gate Trigger Voltage:

3 V

Maximum Leakage Current:

2 mA

Maximum On-state Voltage:

1.4 V

Maximum Operating Temperature:

125 Cel

Maximum RMS On-state Current:

12 A

Repetitive Peak Off-state Voltage:

400 V

Sub-Category:

TRIACs

Surface Mount:

NO

Trigger Device Type:

Trade Compliance

DTA12E Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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